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NONVOLATILE MEMORY, NONVOLATILE PROGRAMMABLE LOGIC SWITCH INCLUDING NONVOLATILE MEMORY, AND NONVOLATILE PROGRAMMABLE LOGIC CIRCUIT
NONVOLATILE MEMORY, NONVOLATILE PROGRAMMABLE LOGIC SWITCH INCLUDING NONVOLATILE MEMORY, AND NONVOLATILE PROGRAMMABLE LOGIC CIRCUIT
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机译：非易失性存储器，非易失性可编程逻辑开关（包括非易失性存储器）和非易失性可编程逻辑电路
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摘要
A nonvolatile memory according to an embodiment includes a memory cell, the memory cell including: a memory transistor including a source, a drain, a gate electrode disposed above a channel between the source and the drain, and a gate insulating film disposed between the channel and the gate electrode; and a fuse element disposed between the gate electrode and a wiring line to which the gate electrode of the memory transistor is connected.
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