Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications

Chia-En Huang; Ying-Je Chen; Hsun OuYang; Chrong-Jung Lin; Ya-Chin King

首页> 外文期刊>Japanese journal of applied physics >Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications

【24h】

Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications

机译：用于90 nm逻辑非易失性存储器应用的源极侧注入编程P沟道自对准氮化物一次性编程单元

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This study demonstrates a logic compatible p-channel self-Aligned-nitride (SAN) cell for one-time programming (OTP) memory applications. The SAN storage structure is independent of the gate oxide thickness, allowing these cells to be performed in a pure advanced logic process beyond 90 nm. The study also exams the characteristics of the source-side injection hot electron (SSIHE) scheme using the simulation tools, and successfully verified the programming characteristics of the p-channel SAN cell with different program voltages. Moreover, this study shows the proposed SAN cell has a wide read current window, high reliability, and superior immunity to disturbance. Combined with a source-side injection scheme, this cell provides a promising solution for advanced logic nonvolatile memory (NVM) applications.

机译：这项研究演示了用于一次性编程（OTP）存储器应用的逻辑兼容p沟道自对准氮化物（SAN）单元。 SAN存储结构与栅极氧化物的厚度无关，从而允许这些单元以超过90 nm的纯高级逻辑工艺执行。该研究还使用仿真工具检查了源侧注入热电子（SSIHE）方案的特性，并成功验证了具有不同编程电压的p沟道SAN单元的编程特性。此外，这项研究表明，所提出的SAN单元具有宽的读取电流窗口，高可靠性和优异的抗扰性。结合源端注入方案，该单元为高级逻辑非易失性存储器（NVM）应用提供了有希望的解决方案。

著录项

来源
《Japanese journal of applied physics》 |2010年第4issue2期|P.04DD05.1-04DD05.3|共3页
作者
Chia-En Huang; Ying-Je Chen; Hsun OuYang; Chrong-Jung Lin; Ya-Chin King;
展开▼
作者单位

Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.;

rnMicroelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.;

rnMicroelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.;

rnMicroelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.;

rnMicroelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology [J] . Chen Y.-J., Huang C.-E., Chen H.-S., IEEE Electron Device Letters . 2008,第8期

机译：具有纯90nm CMOS技术的新型2位/单元p通道逻辑可编程单元
2. An SRAM cell with nonvolatile memory for programmable logic applications [J] . Wright P.J., Madurawe R.U. IEEE Journal of Solid-State Circuits . 1997,第6期

机译：具有非易失性存储器的SRAM单元，用于可编程逻辑应用
3. A New High-Density Twin-Gate Isolation One-Time Programmable Memory Cell in Pure 28-nm CMOS Logic Process [J] . Hsiao W.Y., Peng P.C., Chang T., Electron Devices, IEEE Transactions on . 2015,第1期

机译：纯28 nm CMOS逻辑工艺中的新型高密度双栅隔离一次性可编程存储单元
4. Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL) [C] . 2010 IEEE International Electron Devices Meeting . 2010

机译：嵌入90nm CMOS的聚合物固体电解质（PSE）开关具有免成型和10nsec编程功能，可实现低功耗，非易失性可编程逻辑（NPL）
5. Reconfiguration Optimization for Nonvolatile Memories Based Field Programmable Gate Arrays [D] . Xue, Yuan. 2018

机译：基于非易失性存储器字段可编程门阵列的重新配置优化
6. A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory [O] . Mu-Shih Yeh, Yung-Chun Wu, Kuan-Cheng Liu, 2014

机译：一次性编程非易失性存储器中使用的单个多晶硅栅全能无结鳍式场效应晶体管
7. A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory [O] . Mu-Shih Yeh, Yung-Chun Wu, Kuan-Cheng Liu, 2014

机译：一次性编程非易失性存储器中使用的单个多晶硅栅全能无结鳍式场效应晶体管

Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications

摘要

著录项

相似文献

相关主题

期刊订阅