首页> 外文会议>2010 IEEE International Electron Devices Meeting >Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL)

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Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL)

机译：嵌入90nm CMOS的聚合物固体电解质（PSE）开关具有免成型和10nsec编程功能，可实现低功耗，非易失性可编程逻辑（NPL）

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A novel polymer solid-electrolyte (PSE) switch, NanoBridge, featuring forming-free programming and an extremely high OFF/ON resistance ratio of 105 has been embedded in a 90nm-node CMOS by a fully logic-compatible process. Fast programming of 10nsec is also achieved in a 50nmΦ 1k-bit-cell array by introducing the PSE, enabling a short and parallel programming. The OFF-state T50 lifetime at 125°C is extrapolated to be more than 10 years. The developed switch is a strong candidate for realizing a low-power and low-cost nonvolatile programmable logic (NPL).

机译：一种新颖的聚合物固体电解质（PSE）开关NanoBridge，具有无成形编程和10 ^{5 的极高OFF / ON电阻比的特性，已通过完全逻辑嵌入到90nm节点CMOS中兼容的过程。通过引入PSE，还可在50nmΦ1k位单元阵列中实现10nsec的快速编程，从而实现短而并行的编程。据推断，在125°C时，截止状态的T 50 寿命超过10年。所开发的开关是实现低功耗，低成本非易失性可编程逻辑（NPL）的有力选择。}

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《2010 IEEE International Electron Devices Meeting》|2010年|p.1-4|共4页
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1. Nonvolatile Programmable Switch With Adjacently Integrated Flash Memory and CMOS Logic for Low-Power and High-Speed FPGA [J] . Zaitsu Koichiro, Tatsumura Kosuke, Matsumoto Mari, Electron Devices, IEEE Transactions on . 2015,第12期

机译：非易失性可编程开关，具有集成的闪存和CMOS逻辑，适用于低功耗和高速FPGA
2. Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch [J] . Tada M., Okamoto K., Sakamoto T., Electron Devices, IEEE Transactions on . 2011,第12期

机译：嵌入式CMOS上的聚合物固体电解质开关，用于非易失性纵横开关
3. Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic [J] . Yamamoto S., Shuto Y., Sugahara S. The European physical journal. Applied physics . 2013,第1期

机译：基于伪自旋晶体管架构的非易失性触发器及其在低功耗CMOS逻辑中的非易失性门控应用
4. Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL) [C] . (missing) IEEE International Electron Devices Meeting . 2010

机译：聚合物固体电解质（PSE）开关嵌入90nm CMOS中，具有无成形和10NSEC编程，用于低功耗，非易失性可编程逻辑（NPL）
5. Standard CMOS nonvolatile reprogrammable switch for low-phase noise in LC oscillators. [D] . Papalias, Tamara Ahrens. 2003

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6. A Low-Cost CMOS Programmable Temperature Switch [O] . Yunlong Li, Nanjian Wu 2008

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7. Charge Trap Transistor (CTT): An Embedded Fully Logic-Compatible Multiple-Time Programmable Non-Volatile Memory Element for High- $k$ -Metal-Gate CMOS Technologies [O] . Faraz Khan, Eduard Cartier, Jason C. S. Woo, 2017

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Polymer solid-electrolyte (PSE) switch embedded in 90nm CMOS with forming-free and 10nsec programming for low power, nonvolatile programmable logic (NPL)

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