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CHIP SUBSTRATE FORMED OF CdTe OR CdZnTe, RADIATION DETECTOR USING THE SAME, AND PRODUCTION METHOD OF RADIATION DETECTOR
CHIP SUBSTRATE FORMED OF CdTe OR CdZnTe, RADIATION DETECTOR USING THE SAME, AND PRODUCTION METHOD OF RADIATION DETECTOR
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机译：由CdTe或CdZnTe构成的芯片基板，使用其的放射线检测器以及放射线检测器的制造方法
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摘要
PROBLEM TO BE SOLVED: To provide a radiation detector in which leakage current is reduced, and detection sensitivity of radiation spectra and energy resolution are improved, a production method of it, and a chip substrate formed of CdTe or CdZnTe for achieving them.;SOLUTION: The chip substrate formed of CdTe or CdZnTe comprises a chipping on an end part of the chip substrate, and a length of the chipping is equal to or less than 300 μm. The length of the chipping satisfies a relationship of a1a2, when a maximum length out of respective lengths in which, a first extension line of a ridgeline of a first side of the chip substrate is drawn, and the first extension line and an edge part where there is the chipping of the chip substrate have an orthogonal relationship, is a1, and a maximum length out of respective lengths in which, a second extension line drawn from a ridgeline of a second side of the chip substrate is drawn and the second extension line and the edge part of the chipping have an orthogonal relationship, is a2. Further, the length of the chipping is defined as a maximum length to a length direction of the a1, and when a1=a2, as a maximum length to length directions of the a1 and a2.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT
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