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ULTRAPURE COLLOIDAL SILICA FOR USE IN CHEMICAL MECHANICAL POLISHING APPLICATIONS

机译:用于化学机械抛光应用的超纯胶体二氧化硅

摘要

A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
机译:一种化学机械抛光基材表面的方法,该方法包括以下步骤:使基材与包含多个胶态二氧化硅颗粒的组合物接触,其中所述胶体二氧化硅颗粒的每种微量金属杂质(钾和钠除外)均小于200 ppb,且其含量小于2 ppm残余的醇,其中除钾和钠外的痕量金属的累积浓度为约0.5至约5 ppm;和用于悬浮颗粒的介质;其中所述组合物是超纯胶态二氧化硅分散体;并且其中所述接触在足以使所述衬底平坦化的温度和一段时间下进行。

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