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Planar nonpolar m-plane group Ⅲ-nitride films grown on miscut substrates
Planar nonpolar m-plane group Ⅲ-nitride films grown on miscut substrates
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机译：错切衬底上生长的平面非极性m平面Ⅲ族氮化物膜
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摘要
A non-polar III-nitride film is grown on the miscut of the substrate. The miss cut angle toward the 000-1 direction is a miss cut of 0.75 DEG or more and a miss cut smaller than 27 DEG toward the 000-1 Surface curvatures are suppressed and may include faceted pyramids. An element manufactured using a film is also disclosed. A non-polar III-nitride film with smooth surface morphology is fabricated using a method that includes selecting the miscut angle of the substrate on which the non-polar III-nitride films are grown to suppress surface curvatures of the non-polar III-nitride films. A non-polar III-nitride-based device is grown on the film with a smooth surface morphology grown on the miscut angle of the substrate on which the non-polar III-nitride films are grown. In addition, the miss cut angle can be selected to obtain light emission of a long wavelength from the non-polar film.
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