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Bigfet ESD protection that is robust against the first peak of a system-level pulse
Bigfet ESD protection that is robust against the first peak of a system-level pulse
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机译:Bigfet ESD保护可抵抗系统级脉冲的第一个峰值
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摘要
Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bigFET configured to conduct an ESD pulse during an ESD event. The bigFET includes a backgate terminal, a source terminal, and a current distributor connected to the backgate terminal and the source terminal and configured to homogeneously activate a parasitic bipolar junction transistor of the bigFET in response to a current that is generated in the bigFET during the ESD pulse. Other embodiments are also described.
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