CMOS IMAGE SENSOR WITH IMPROVED FILL-FACTOR AND REDUCED DARK CURRENT

• 1. 一种降低扩散暗电流的CMOS图像传感器像素结构 [P] . 中国专利： CN111403426A . 2020-07-10
• 2. 通过F离子注入降低CMOS图像传感器暗电流的方法 [P] . 中国专利： CN105321974B . 2018.04.03
• 3. CMOS IMAGE SENSOR WITH IMPROVED FILL-FACTOR AND REDUCED DARK CURRENT [P] . 欧洲知识产权局专利： EP2266310A4 . 2014-01-08

  机译： 具有改进的填充因子和降低的暗电流的CMOS图像传感器

• 4. CMOS image sensor with improved fill-factor and reduced dark current [P] . 美国专利： US7977716B2 . 2011-07-12

  机译： CMOS图像传感器，具有改进的填充系数和降低的暗电流

• 5. CMOS IMAGE SENSOR WITH IMPROVED FILL-FACTOR AND REDUCED DARK CURRENT [P] . 欧洲知识产权局专利： EP2266310A2 . 2010-12-29

  机译： 具有改进的填充因子和降低的暗电流的CMOS图像传感器

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• 2. Complete Focal Plane Compression Based on CMOS Image Sensor Using Predictive Coding [J] . Yao Suying, Yu Xiao, Gao Jing, 天津大学学报（英文版） . 2015,第001期
• 3. In-Pixel Charge Addition Scheme Applied in Time-Delay Integration CMOS Image Sensors [J] . Xu Chao, Yao Suying, Xu Jiangtao, 天津大学学报（英文版） . 2013,第002期
• 4. A Novel Shared Active Pixel Architecture (SAPA) with Low Dark Current and High Fill-Factor (FF) for CMOS Image Sensors [J] . Vinay Kumar, Krishna Lal Baishnab, Binod Kumar Journal of Low Power Electronics . 2017,第3期
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• 6. Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode $0.18~muhbox{m}$ CMOS Image Sensors [J] . IEEE Transactions on Nuclear Science . 2014,第1aPart3期
• 7. A High Fill-Factor Low Dark Leakage CMOS Image Sensor with Shared-Pixel Design [C] . Min-Woong Seo, Keita Yasutomi, Keiichiro Kagawa, Conference on Image Sensors and Imaging Systems . 2014
• 8. Differential Integrator Pixel Architecture for Dark Current Compensation in CMOS Image Sensors [D] . Mehri Dehnavi, Marzieh. 2015
• 9. Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers [O] . Ayumi Onaka-Masada, Takeshi Kadono, Ryosuke Okuyama, 2020
• 10. A Tunable CMOS Image Sensor with High Fill-Factor For High Dynamic Range Applications. [O] . Fernando De Souza Campos, Jacobus Swart, M. Jamal Deen, 2020

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