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首页> 外文期刊>Journal of Low Power Electronics >A Novel Shared Active Pixel Architecture (SAPA) with Low Dark Current and High Fill-Factor (FF) for CMOS Image Sensors
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A Novel Shared Active Pixel Architecture (SAPA) with Low Dark Current and High Fill-Factor (FF) for CMOS Image Sensors

机译：具有低暗电流和高填充因子（FF）的新型共享有源像素架构（SAPA），用于CMOS图像传感器

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摘要

CMOS image sensors are very quickly replacing the CCD image sensors in various digital cameras in the last two or three decades due to the advantages of low power consumption, high read out time and on-chip functionality. Various architectures have been proposed in the literature for implementation of CMOS image sensors. The first architecture used for implementation of CMOS image sensors were Passive Pixel Sensors (PPS) where a transistor per pixel was used to read out the charge. This technology suffered from low sensitivity and low charge to voltage conversion. To overcome the problems of passive pixel sensor (PPS), a new architecture was proposed where an amplifier was placed in each pixel known as active pixel sensor (APS). APS suffered from low fill-factor (FF) and high dark current due to increase in number of transistors per pixel. In this paper, we present a new architecture where the amplifier/buffer is shared among certain number of pixels known as shared active pixel architecture (SAPA). The proposed SAPA circuit offers low dark current, high fill-factor and consumes less power as compared to conventional APS circuit. The circuits have been implemented in Cadence Virtuoso tools using 180 nm technology.
机译：CMOS图像传感器由于低功耗，高读出时间和片上功能而在过去的两年或三十年中非常快速地更换各种数码相机中的CCD图像传感器。在文献中提出了各种架构，以实现CMOS图像传感器。用于实现CMOS图像传感器的第一架构是被动像素传感器（PPS），其中使用每个像素晶体管读取电荷。该技术遭受了低灵敏度和低电压转换的电荷。为了克服被动像素传感器（PPS）的问题，提出了一种新的架构，其中放大器被放置在称为有源像素传感器（APS）的每个像素中。由于每个像素的晶体管数量增加，APS患有低填充因子（FF）和高暗电流。在本文中，我们提出了一种新的架构，其中放大器/缓冲区在已称为共享有源像素架构（SAPA）的某些像素之间共享。与传统APS电路相比，所提出的SAPA电路提供低暗电流，高填充因子，并消耗更少的功率。电路已经在使用180nm技术的Cadence Virtuoso工具中实现。

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