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Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
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机译：使用感应耦合等离子体化学气相沉积制造太阳能电池的方法
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摘要
A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to10 relative to mixed gas.
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