首页> 外国专利> Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate

Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate

机译：基板掩模图案，在基板上形成结构的方法，从斜格子图案形成方格子图案的方法以及在基板上形成图案的方法

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摘要

A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

机译：一种在基板上形成图案的方法，包括形成间隔开的，向上开口的，圆柱状的结构，该结构从基底的纵向向外突出。侧壁衬形成在圆柱状结构的内侧壁和外侧壁上方，并且在圆柱状结构的横向外侧形成间隙空间。间隙空间被纵向接触的侧壁衬里分别包围，该侧壁衬里在四个圆柱状结构的外侧壁上。公开了其他实施例，包括与方法无关的结构。

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公开/公告号US8999852B2

专利类型
公开/公告日2015-04-07

原文格式PDF
申请/专利权人 MICRON TECHNOLOGY INC.;
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申请/专利号US201213712806
发明设计人 RANJAN KHURANA;KEVIN R. SHEA;VISHAL SIPANI;ANTON J. DEVILLERS;WILLIAM R. BROWN;SHANE J. TRAPP;
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申请日2012-12-12
分类号H01L21/302;H01L21/027;H01L21/033;H01L21/311;
国家 US
入库时间 2022-08-21 15:17:08

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