首页> 外国专利> Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device

Stimulated phonon emission device and oscillator, frequency filter, cooling device, light-receiving device, and light-emitting device comprising the stimulated phonon emission device

机译:受激声子发射装置和振荡器,频率滤波器,冷却装置,光接收装置以及包括受激声子发射装置的发光装置

摘要

A stimulated phonon emission device of an embodiment is provided with a first electroconductive type of semiconductor substrate of an indirect transition type semiconductor crystal, a second electroconductive type of well region provided in the semiconductor substrate, an element isolation region deeper than the well region, an element region surrounded by the element isolation region, and a field-effect transistor having a plurality of gate electrodes which are formed in the well region in the element region, are parallel to each other, and are arranged at a constant pitch and first electroconductive type of source region and drain region provided in the element regions on the both sides of the gate electrode.
机译:一个实施例的受激声子发射器件具有间接过渡型半导体晶体的第一导电类型的半导体衬底,设置在半导体衬底中的第二导电类型的阱区,比阱区深的元件隔离区,由元件隔离区域包围的元件区域,以及具有多个栅电极的场效应晶体管,该多个场电极形成在元件区域中的阱区域中,并且彼此平行,并且以恒定间距和第一导电类型布置设置在栅电极两侧的元件区中的源区和漏区的截面图。

著录项

  • 公开/公告号US9153680B2

    专利类型

  • 公开/公告日2015-10-06

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号US201313965654

  • 发明设计人 KAZUHIDE ABE;KAZUHIKO ITAYA;

    申请日2013-08-13

  • 分类号H01L29/84;H01L29/772;H01L31;H01S4;

  • 国家 US

  • 入库时间 2022-08-21 15:18:21

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