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ALTERNATING MASKING AND LASER SCRIBING APPROACH FOR WAFER DICING USING LASER SCRIBING AND PLASMA ETCH
ALTERNATING MASKING AND LASER SCRIBING APPROACH FOR WAFER DICING USING LASER SCRIBING AND PLASMA ETCH
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机译：使用激光刻划和等离子刻蚀的晶圆划片的交替制作和激光刻划方法
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摘要
Alternating masking and laser scribing approaches for wafer dicing using laser scribing and plasma etch are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits includes forming a first mask above the semiconductor wafer. The first mask is patterned with a first laser scribing process to provide a patterned first mask with a first plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the first mask with the first laser scribing process, a second mask is formed above the patterned first mask. The second mask is patterned with a second laser scribing process to provide a patterned second mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. The second plurality of scribe lines is aligned with and overlaps the first plurality of scribe lines. The semiconductor wafer is plasma etched through the second plurality of scribe lines to singulate the integrated circuits.
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