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METHOD FOR EXTRACTING SUBGAP DENSITY OF STATES AND SURFACE POTENTIALS OF AMORPHOUS SEMICONDUCTOR THIN-FILM TRANSISTOR USING COUPLING FACTOR, AND APPARATUS THEREOF
METHOD FOR EXTRACTING SUBGAP DENSITY OF STATES AND SURFACE POTENTIALS OF AMORPHOUS SEMICONDUCTOR THIN-FILM TRANSISTOR USING COUPLING FACTOR, AND APPARATUS THEREOF
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机译:利用耦合因子提取非晶半导体薄膜晶体管的状态和表面势的亚能隙密度的方法及其装置
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摘要
Disclosed are a method of extracting the surface potential and state density within a band-gap of an amorphous semiconductor thin film transistor using a coupling factor, and a device thereof. The method for extracting the surface potential of the amorphous semiconductor thin film transistor according to an embodiment of the present invention comprises a step of measuring a drain current by a gate voltage of the thin film transistor; a step of extracting a drain current lower than a threshold voltage between the measured drain currents; and a step of extracting the surface potential by the gate voltage of the thin film transistor based on the differentiation of the drain current extracted. The step of extracting the surface potential extracts the surface potential by the gate voltage in the light of a coupling factor included in the surface potential and the extracted drain currents.
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