首页> 外国专利> METHOD FOR EXTRACTING SUBGAP DENSITY OF STATES AND SURFACE POTENTIALS OF AMORPHOUS SEMICONDUCTOR THIN-FILM TRANSISTOR USING COUPLING FACTOR, AND APPARATUS THEREOF

METHOD FOR EXTRACTING SUBGAP DENSITY OF STATES AND SURFACE POTENTIALS OF AMORPHOUS SEMICONDUCTOR THIN-FILM TRANSISTOR USING COUPLING FACTOR, AND APPARATUS THEREOF

机译:利用耦合因子提取非晶半导体薄膜晶体管的状态和表面势的亚能隙密度的方法及其装置

摘要

Disclosed are a method of extracting the surface potential and state density within a band-gap of an amorphous semiconductor thin film transistor using a coupling factor, and a device thereof. The method for extracting the surface potential of the amorphous semiconductor thin film transistor according to an embodiment of the present invention comprises a step of measuring a drain current by a gate voltage of the thin film transistor; a step of extracting a drain current lower than a threshold voltage between the measured drain currents; and a step of extracting the surface potential by the gate voltage of the thin film transistor based on the differentiation of the drain current extracted. The step of extracting the surface potential extracts the surface potential by the gate voltage in the light of a coupling factor included in the surface potential and the extracted drain currents.
机译:公开了一种使用耦合因子提取非晶半导体薄膜晶体管的带隙内的表面电势和状态密度的方法及其装置。根据本发明的一个实施例的用于提取非晶半导体薄膜晶体管的表面电势的方法包括以下步骤:通过薄膜晶体管的栅极电压来测量漏极电流;以及,通过所述薄膜晶体管的栅极电压来测量漏极电流。提取低于所测量的漏极电流之间的阈值电压的漏极电流的步骤;根据提取的漏极电流的微分,通过薄膜晶体管的栅极电压提取表面电位。提取表面电势的步骤根据表面电势中包括的耦合因子和提取的漏极电流通过栅极电压提取表面电势。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号