首页> 外国专利> Method for forming selective emitter of solar cell using annealing by laser of top hat type and Method for manufacturing solar cell using the same

Method for forming selective emitter of solar cell using annealing by laser of top hat type and Method for manufacturing solar cell using the same

机译:利用大礼帽式激光退火形成太阳能电池的选择性发射极的方法及使用该方法制造太阳能电池的方法

摘要

A method for forming a selective emitter of solar cell using laser annealing and a method for manufacturing the solar cell using the same are provided to reduce the frequency of irradiation of laser using a top hat type laser. A silicon substrate(301) to which the impurity of the first conductivity type is doped is prepared. An insulating layer(303) in which the impurity of the second conductive type which is opposite conductive is contained is formed. The impurity within the insulating layer is injected to the upper silicon substrate and an emitter layer(302) is formed. A selective emitter is formed on the substrate on which the laser(L) is irradiated. The insulating layer is removed. The number of laser beams is corresponded to the number of finger front electrodes. The beam width of laser is greater than the width of the finger front electrode.
机译:提供一种使用激光退火形成太阳能电池的选择性发射极的方法以及使用该方法制造太阳能电池的方法,以减少使用高帽型激光器的激光的照射频率。制备掺杂有第一导电类型的杂质的硅衬底(301)。形成其中包含与导电相反的第二导电类型的杂质的绝缘层(303)。绝缘层内的杂质被注入到上硅基板,并且形成发射极层(302)。在其上照射激光(L)的基板上形成选择性发射器。绝缘层被去除。激光束的数量对应于手指前电极的数量。激光束的宽度大于手指前电极的宽度。

著录项

  • 公开/公告号KR101370126B1

    专利类型

  • 公开/公告日2014-03-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080016751

  • 发明设计人 유재성;

    申请日2008-02-25

  • 分类号H01L31/04;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:24

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