首页> 外国专利> METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, METHOD FOR GROWING ORGANIC SINGLE CRYSTAL THIN FILM, ORGANIC SINGLE CRYSTAL THIN FILM, ELECTRONIC DEVICE AND GROUP OF ORGANIC SINGLE CRYSTAL THIN FILMS

METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, METHOD FOR GROWING ORGANIC SINGLE CRYSTAL THIN FILM, ORGANIC SINGLE CRYSTAL THIN FILM, ELECTRONIC DEVICE AND GROUP OF ORGANIC SINGLE CRYSTAL THIN FILMS

机译:有机半导体元件的制造方法,有机半导体元件,有机单晶薄膜的生长方法,有机单晶薄膜,电子设备以及有机单晶薄膜组

摘要

Provided is a manufacturing method of an organic semiconductor element, the method including supplying an unsaturated organic solution obtained by dissolving an organic compound in a solvent to a growth control region and at least one nucleation control region of a base body having, on one principal plane, the growth control region and the nucleation control region which is provided on one side of the growth control region to be coupled with the growth control region, and allowing an organic semiconductor single crystal thin film composed of the organic compound to grow by evaporating the solvent of the organic solution.
机译:提供一种有机半导体元件的制造方法,该方法包括将通过将有机化合物溶解在溶剂中而获得的不饱和有机溶液供给至在一个主面上具有基体的生长控制区域和至少一个成核控制区域。 ,生长控制区和设置在生长控制区一侧的成核控制区与生长控制区相连,并通过蒸发溶剂使由有机化合物组成的有机半导体单晶薄膜生长有机溶液。

著录项

  • 公开/公告号KR20140088102A

    专利类型

  • 公开/公告日2014-07-09

    原文格式PDF

  • 申请/专利权人 SONY CORPORATION;

    申请/专利号KR20147010801

  • 发明设计人 GOTO OSAMU;HOBARA DAISUKE;MURAKAMI YOSUKE;

    申请日2012-10-25

  • 分类号H01L51/05;H01L51/40;H01L21/368;H01L21/336;H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 15:42:31

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