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METHOD TO ENHANCE THE FILL FACTOR OF CIGS THIN FILM SOLAR CELLS USING CD-FREE BUFFER LAYERS

机译:利用无CD缓冲层增强CIGS薄膜太阳能电池填充因子的方法

摘要

The present invention relates to a method for enhancing a fill factor of a Cu(In,Ga)Se^2 (referred to as CIGS, hereinafter) thin film solar cell using a Cd-free buffer layer such as an oxide or a sulfide having wide band gap energy. In detail, when oxide and sulfide thin films used as a buffer layer are manufactured by using an atomic layer deposition method, compositions within the thin films are adjusted to fabricate a buffer layer having a dual-layer structure having different electrical characteristics. Thus, a relatively low fill factor generated in a CIGS thin film solar cell using an oxide or a sulfice having low electrical conductivity in a buffer layer can be resolved. The structure of the CIGS thin film solar cell using the dual-layer buffer layer fabricated according to the present invention, and a fill factor and light conversion efficiency of the solar cell can be enhanced.
机译:本发明涉及一种使用无镉缓冲层如氧化物或硫化物来提高Cu(In,Ga)Se ^ 2(以下称为CIGS)薄膜太阳能电池的填充因子的方法,宽带隙能量。详细地,当通过使用原子层沉积方法制造用作缓冲层的氧化物和硫化物薄膜时,调节薄膜内的组成以制造具有具有不同电特性的双层结构的缓冲层。因此,可以解决在缓冲层中使用导电率低的氧化物或硫酸盐的CIGS薄膜太阳能电池中产生的填充率低的问题。使用根据本发明制造的双层缓冲层的CIGS薄膜太阳能电池的结构,可以提高太阳能电池的填充率和光转换效率。

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