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METHOD TO ENHANCE THE FILL FACTOR OF CIGS THIN FILM SOLAR CELLS USING CD-FREE BUFFER LAYERS
METHOD TO ENHANCE THE FILL FACTOR OF CIGS THIN FILM SOLAR CELLS USING CD-FREE BUFFER LAYERS
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机译:利用无CD缓冲层增强CIGS薄膜太阳能电池填充因子的方法
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摘要
The present invention relates to a method for enhancing a fill factor of a Cu(In,Ga)Se^2 (referred to as CIGS, hereinafter) thin film solar cell using a Cd-free buffer layer such as an oxide or a sulfide having wide band gap energy. In detail, when oxide and sulfide thin films used as a buffer layer are manufactured by using an atomic layer deposition method, compositions within the thin films are adjusted to fabricate a buffer layer having a dual-layer structure having different electrical characteristics. Thus, a relatively low fill factor generated in a CIGS thin film solar cell using an oxide or a sulfice having low electrical conductivity in a buffer layer can be resolved. The structure of the CIGS thin film solar cell using the dual-layer buffer layer fabricated according to the present invention, and a fill factor and light conversion efficiency of the solar cell can be enhanced.
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