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PHOTORESIST HAVING POSITIVE RESIST CHARACTERISTICS, PROCESS FOR PHOTOCHEMICAL STRUCTURING THEREOF, PROCESS FOR PREPARING SILANES AND SILICA (HETERO)POLY(CO)CONDENSATES HAVING POSITIVE RESIST CHARACTERISTICS AND SILICA (HETERO)POLY(CO)CONDENSATES
PHOTORESIST HAVING POSITIVE RESIST CHARACTERISTICS, PROCESS FOR PHOTOCHEMICAL STRUCTURING THEREOF, PROCESS FOR PREPARING SILANES AND SILICA (HETERO)POLY(CO)CONDENSATES HAVING POSITIVE RESIST CHARACTERISTICS AND SILICA (HETERO)POLY(CO)CONDENSATES
The present invention relates to a specific heteropolymer, namely a silica (hetero)poly(co)condensate having positive resist characteristics, which is notable for polycondensation or copolycondensation of specifically modified silanes. The invention likewise relates to monomeric silanes from which the corresponding heteropolymers, i.e. the silica (hetero)poly(co)condensates, can be prepared. The inventive silica (hetero)poly(co)condensates are usable for a photoresist having positive resist characteristics. The invention additionally relates to corresponding processes for preparing both the silanes and the silica (hetero)poly(co)condensates, and to a process for photochemical structuring of the inventive photoresist based on the silica (hetero)poly(co)condensates.
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