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Advances in Resist Technology and Processing XVIII

召开年：2001
召开地：Santa Clara, CA(US);Santa Clara, CA(US)
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1.An Improved Notch Model for Resist Dissolution in Lithography Simulation

机译：光刻模拟中抗溶蚀的改进缺口模型
- 作者：Stewart Robertson;Edward Pavelchek;Wolfgang Hoppe;Robert Wildfeuer
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- lithography simulation;
- photoresist development;
- dissolution rate equation;
2.Analysis of Deprotection Reaction for Chemically Amplified Resists by Using FT-IR Spectrometer with Exposure Tool

机译：带有曝光工具的FT-IR光谱仪分析化学放大的抗蚀剂的脱保护反应
- 作者：Yasuhiro Miyake;Mariko Isono;Atsushi Sekiguchi
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
3.Analysis of the Relation between Exposure Parameters and Critical Dimension by Response Surface Model

机译：响应面模型分析曝光参数与临界尺寸的关系
- 作者：Dong-Soo Sohn;Young-Soo Sohn;Heung-Jin Bak;Hye-Keun Oh
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- exposure parameter;
- critical dimension;
- response surface model;
- 193 nm;
- CAR;
- lithography simulation;
4.Ar Ion Implantation into Resist for Etching Resistance Improvement

机译：注入Ar离子以提高耐蚀性
- 作者：Atsumi Yamaguchi;Akihiro Nakae;Kouichirou Tsujita.
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- ion implantation;
- etching resistance improvement;
- pattern shrinking;
- line edge roughness;
- CD control;
- KrF resist;
- ArF resist;
5.ArF Resist for Contact Hole Application

机译：抗ArF的接触孔应用
- 作者：K. Rex Chen;Peggy Lawson;Tim Hughes;Bill Brunsvold;P. Rao Varanasi;Robin Keller;George Jordhamo
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 193nm;
- ArF;
- resist;
- addition cyclic olefin;
- contact hole;
- bottlenecking;
- lipping;
- swelling;
6.Control of line edge roughness of ultrathin resist films subjected to EUV exposure

机译：控制EUV曝光的超薄抗蚀剂膜的线边缘粗糙度
- 作者：Manhyoung Ryoo;Shigeru Shirayone;Hiroaki Oizumi;Nobuyuki Matsuzawa;Shigeo Me;Ei Yano;Shinji Okazaki
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
7.Creation of Low Molecular-weight Organic Resists for Nanometer Lithography

机译：用于纳米光刻的低分子量有机抗蚀剂的创建
- 作者：Toshiaki Kadota;Motoko Yoshiiwa;Hiroshi Kageyama;Fujio Wakaya;Kenji Gamo;Yasuhiko Shirota
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
8.Dependence of Resist Profile on Exposed Area Ratio

机译：抗蚀剂轮廓对暴露面积比的依赖性
- 作者：Eishi Shiobara;Daisuke Kawamura;Kentaro Matsunaga;Yasunobu Onishi
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
9.Design and Performance of Photoresist Materials for ArF Lithography

机译：ArF光刻光刻胶材料的设计与性能
- 作者：Hyun-Woo Kim;Dong-Won Jung;Sook Lee;Sang-Jun Choi;Sang-Gyun Woo;Robert J. Kavanagh;George Barclay;Bob Blacksmith;Doris Kang;Gerd Pohlers;Jim Cameron;Joe Mattia;Stefan Caporale;Thomas Penniman;Lori Joesten;James W. Thackeray
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- photoresist;
- chemically amplified resist;
- ArF;
- lithography;
- cycloolefin polymer;
- VEMA;
- methacrylate polymer.;
10.Development of 193nm Organic BARC

机译：193nm有机BARC的开发
- 作者：Takahiro Kishioka;Shinya Arase;Kazuhisa Ishii;Kenichi Mizusawa;Hiroyoshi Fukuro
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
11.Development of a Bond Contribution Model for Structure: Property Correlations in Dry Etch Studies

机译：结构的键贡献模型的开发：干法刻蚀研究中的性能关联
- 作者：Tianyue Yu;Philip Ching;Christopher Ober;Shreeram Deshpande;Rama Puligadda
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- dry etch resistance;
- structure: property correlation;
- photoresist;
12.Development of DUV Resists for Zero Angle and Angled Implant Applications

机译：用于零角度和成角度植入物的DUV抗蚀剂的开发
- 作者：Patty Fallen;Mike Cronin;Joe Lachowski;Pat Valerio;Larry Bachetti;Jacque Georger;Mike Mori;Dave Tomes;Kim Wynja
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- photoresist implant;
- angled implant;
- 248nm;
- low-energy;
- high-energy;
- stopping power;
13.Development of Full-fill Bottom Anti-reflective Coatings For Dual Damascene Process

机译：双镶嵌工艺全填充底部抗反射涂层的开发
- 作者：Yubao Wang;Xiaoming Wu;Gu Xu;Jim Lamb III;John Sullivan;James Claypool;Jackie Backus;Sean Trautman;Xie Shao;Satoshi Takei;Yasuhisa Sone;Kenichi Mizusawa;Hiroyoshi Fukuro
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- dual damascene;
- bottom anti-reflective coating (BARC);
- etch block;
- planarizing BARC;
- via fill;
- via first;
14.Dissolution behavior of fluoroalcohol substituted polystyrenes

机译：氟代醇取代的聚苯乙烯的溶解行为
- 作者：Daniel S. Half;Brian Osborn;Kyle Patterson;Sean D. Burns;C. Grant Willson
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
15.Dissolution performance of device pattern with low-impact development

机译：低影响开发的设备模式的溶解性能
- 作者：Shinichi Ito;Kei Hayasaki;Hiroko Nakamura
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- development;
- low-impact;
- monitor;
- CCD camera;
- critical dimension;
- uniformity;
- diffracted light;
16.Effect of End Group Structures of Methacrylate Polymers on ArF Photoresist Performances

机译：甲基丙烯酸酯聚合物端基结构对ArF光阻性能的影响
- 作者：Hikaru Momose;Shigeo Wakabayashi;Tadayuki Fujiwara;Kiyoshi Ichimura;Jun Nakauchi
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- ArF photoresist;
- alicyclic methacrylate;
- end group structure;
- sensitivity;
17.Evaluation of I-line and DUV Photoresists for High Density Optical Disc Mastering

机译：评估I-line和DUV光刻胶用于高密度光盘母版制作
- 作者：Roland Tacken;Elise C. Rodenburg;Mark van der Veer;Jos H.C. van Vegchel;Richard Eijmberts
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
18.Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157nm

机译：评估标准添加方法以确定在157nm下化学放大的光致抗蚀剂中产生酸的速率常数
- 作者：Adam R. Pawloski;Charles R. Szmanda;Paul F. Nealey
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- photoacid generator;
- base quencher;
- C parameter;
- 157nm lithography;
- standard addition;
19.Examination of a simplified reaction-diffusion model for post exposure bake of chemically amplified resists

机译：对化学放大后的抗蚀剂进行曝光后烘烤的简化反应扩散模型的检验
- 作者：Mark D. Smith;Chris A. Mack
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- post exposure bake;
- chemically amplified resists;
- lithography simulation;
- PROLITH;
20.Formulation Optimizations for Variable DUV Resist Thickness Applications Based on the Same Polymer Matrix

机译：基于相同聚合物基体的可变DUV抗蚀剂厚度应用的配方优化
- 作者：Karin Schlicht;Brian Maxwell;John Ferri;Medhat Toukhy
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
21.High etch rate type 248nm Bottom Anti-Reflective Coatings

机译：高蚀刻速率类型248nm底部抗反射涂层
- 作者：Tomoyuki Enomoto;Shin-ya Arase;Ken-ichi Mizusawa;Hiroyoshi Fukuro
- 会议名称：《》 | 2001年
22.Improved Crosslinkable Polymeric Binders for 193-nm Bottom Antireflective Coatings (BARCs)

机译：改进的可交联聚合物粘合剂，用于193 nm底部抗反射涂层（BARC）
- 作者：Jim D. Meador;Xie Shao;Mandar Bhave;Chris Cox;John Thompson;Debra Thomas;Stephen Gibbons;Ashley Farnsworth;Michael Rich
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- microchips;
- 193-nm lithography;
- antireflective coating;
- thermosetting;
- compatibility;
- conformality;
23.Interlayer Dielectric Process for LSI Circuits Using Positive Photosensitive Polyimide Synthesized by Block- Copolymerization

机译：通过嵌段共聚合合成正光敏聚酰亚胺的LSI电路层间介电工艺
- 作者：Masahiro Aoyagi;Shigemasa Segawa;Eun-Sil Jung;Taro Itatani;Masanori Komuro;Tsunenori Sakamoto;Hiroshi Itatani;Masataka Miyamura;Shunichi Matsumoto
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- polyimide;
- dielectric;
- block-copolymerization;
- photosensitive;
24.Investigation of Electron Beam Stabilization of 193nm Photoresists

机译：193nm光刻胶的电子束稳定化研究
- 作者：Myoung-Soo Kim;Jong-Woon Park;Hak-Joon Kim;Bum-Jin Jun;Myoung-Goon Gil;Bong-Ho Kim;Matthew Ross;William Livesay
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- ArF (193nm) photoresist;
- acrylate type resist;
- COMA type resist;
- electron beam stabilization;
25.Lithographic Behavior of Carboxylate Based Dissolution Inhibitors and the Effect of Blending

机译：羧酸盐型溶解抑制剂的平版印刷行为及其共混作用
- 作者：Frank M. Houlihan;Zhenglin Yan;Elsa Reichmanis;Gary Dabbagh;Kevin Bolan;Om Nalamasu;Ilya Rushkin;Ognian Dimov
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- dissolution inhibitors;
- 193 nm;
- blending;
26.Modeling the impact of thermal history during post exposure bake on the lithographic performance of chemically amplified resists

机译：建模后曝光烘烤期间的热历史对化学放大型抗蚀剂光刻性能的影响
- 作者：Mark D. Smith;Chris A. Mack;John S. Petersen
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- hotplate;
- heat transfer;
- double bake;
- PROLITH;
- lithography simulation;
27.Modification of Development Parameters of 193 nm Chemically Amplified Resist with Pattern Density

机译：用图案密度修改193 nm化学放大抗蚀剂的显影参数
- 作者：Eun-Jung Seo;Young-Soo Sohn;Heung-Jin Bak;Hye-Keun Oh;Sanggyun Woo;Nakgeuon Seong;Han-Ku Cho
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- development parameter;
- 193 nm;
- lithography simulation;
- photoresist;
28.Negative-tone Cycloolefin Photoresist for 193 nm Lithography

机译：用于193 nm平版印刷的负性环烯烃光刻胶
- 作者：S. C. Fu;K. H. Hsieh;L. A. Wang
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- CAMP;
- 193 nm lithography;
- cycloolefin;
- negative-tone resist;
29.New advances in resist system for next generation lithography

机译：下一代光刻胶系统的新进展
- 作者：Yongqi Hu;Wei He;Kenneth E. Gonsalves;Lhadi Merhari
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- nanocomposite;
- resist;
- electron beam;
- lithography;
- sub-loonm resolution;
30.New Fast Etching Bottom Antireflective Coatings For 248nm Lithography

机译：适用于248nm光刻的新型快速蚀刻底部抗反射涂层
- 作者：Rama Puligadda;Runhui Huang;Chris Cox;James E. Lamb III;Manuel Arjona;James Claypool
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- anti-reflective coating;
- BARC;
- etch;
- CD control;
- thin film;
31.New Polymer for 157nm Single-Layer Resist Based on Fluorine Containing Acryl Copolymer

机译：含氟丙烯基共聚物的157nm单层抗蚀剂新聚合物
- 作者：Toshiyuki Ogata;Koutaro Endo;Hiroshi Komano;Toshimasa Nakayama
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 157nm positive-tone resist;
- trifluoromethyl group;
- fluorine-containing acrylpolymer;
32.193 SLR System based on COMA - Acryl hybrid system

机译：基于COMA的193 SLR系统-Acryl混合系统
- 作者：Masafumi Yamamoto;Kiyoshi Murata;Hiroyuki Ishii;Satoshi Ebata;Toru Kajita;Tsutomu Shimokawa
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 193-nm single layer resist;
- hybrid polymer;
- hydrophilicity;
- developability;
- adhesion;
33.193nm Contact Photoresist Reflow Feasibility Study

机译：193nm接触光刻胶回流焊可行性研究
- 作者：Kevin Lucas;Mark Slezak;Monique Ercken;Frieda Van Roey
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 193nm photoresists;
- photoresist reflow;
- contact patterning for the l00nm;
- 130nm generations;
34.193nm Single Layer Resist Materials: Total Consideration on Design, Physical Properties, and Lithographic Performances on All Major Alicyclic Platform Chemistries

机译：193nm单层抗蚀剂材料：在所有主要脂环平台化学上均应综合考虑设计，物理性质和光刻性能
- 作者：T. Kajita;Y. Nishimura;M. Yamamoto;H. Ishii;A. Soyano;A. Kataoka;M. Slezak;Makoto Shimizu;P. R. Varanasi;G. Jordahamo;M.C. Lawson;R. Chen;W. R. Brunsvold;W. Li;R. D. Allen;H. Ito;H. Truong;T. Wallow
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- ArF;
- norbornene;
- tetracyclododecene;
- COMA;
- addition polymer;
- ROMP;
- (meth)acrylate;
- VEMA;
- cyclyzed system;
- line slimming;
- etch resistance;
- surface roughness;
- ESCA;
- AFM;
35.Advanced KrF Chemical Amplified Photoresists for 0.13um Lithography

机译：用于0.13um光刻的高级KrF化学放大光刻胶
- 作者：Qunying Lin;Sack Michael
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- advanced KrF photoresists;
- half tone PSM;
- process window;
- OPC technology;
- annular illumination;
36.Novel 193nm Photoresist Based on Olefin-Containing Lactones

机译：基于含烯烃内酯的新型193nm光刻胶
- 作者：Kwang-Sub Yoon;Dong-Won Jung;Sook Lee;Sung-Ho Lee;Sang-Jun Choi;Sang-Gyun Woo;Joo-Tae Moon
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- ArF photoresist;
- olefin-containing lactones;
- dissolution contrast;
37.Novel Chemically Amplified Positive Resist containing Acetal Type Crosslinker of poly(3,3'-dimethoxypropene) for 193nm Top Surface Imaging Process

机译：用于193nm顶面成像工艺的新型化学放大正阻性含缩醛型聚（3,3'-二甲氧基丙烯）交联剂
- 作者：Cha-Won Koh;Jae-Chang Jung;Myoung-Soo Kim;Keun-Kyu Kong;Geunsu Lee;Min-Ho Jung;Jin-Soo Kim;Ki-Soo Shin
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
38.Novel Conformal Organic Anti-Reflective Coatings For Advanced i-Line Lithography

机译：适用于高级i线光刻的新型共形有机抗反射涂层
- 作者：Shreeram Deshpande;Kelly Nowak;Shelly Fowler;Paul Williams;Manuel Arjona
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
39.Novel Develop Application Method to Improve Critical Dimension Control

机译：改进关键尺寸控制的新型开发应用方法
- 作者：Kazuo Sakamoto
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- developer;
- CD uniformity;
- KrF;
- CAR;
- UV6;
40.Novel Negative Photoresist Process for 0.18 um Dual Damascene

机译：用于0.18 um双镶嵌的新型负性光刻胶工艺
- 作者：Lin-Hung Shiu;Chih-Ming Lai;Fu-Jye Liang;Hung-Chun Chen;Li-Jui Chen;Shuo-Yen Chou
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- dual damascene;
- negative tone resist;
- attenuated phase shift mask;
41.Organic BARC process evaluation for via first dual damascene patterning

机译：通过首次双镶嵌图案进行有机BARC工艺评估
- 作者：Cher-Huan Tan;Moitreyee Mukherjee-Roy;Woo-Min Jo;Rakesh Kumar;Pang-Dow Foo;Santhanesh
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- lithography;
- BARC;
- dual damascene;
- conformal Planarizing coatings;
- via filling;
42.Photolithographic Evaluation of Deep UV Resist Materials for Maskmaking Applications

机译：用于掩模制造应用的抗深紫外线材料的光刻评估
- 作者：Warren Montgomery;Alex Buxbaum;William Rodrigues;Jeff Albelo;Scott Fuller
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- maskmaking;
- DUV resist;
- etch descum;
- bottom ARC;
- fab environment;
43.Planarizing ARs for Dual Damascene Processing

机译：双镶嵌处理的平面AR
- 作者：Edward K. Pavelchek;Marjorie Cernigliaro;Peter Trefonas;Amy Kwok;Suzanne Coley
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
44.Post-Modification as A Way to Improve the Lithographic Performance of Resist Materials

机译：后改性作为改善抗蚀材料平版印刷性能的一种方法
- 作者：Wenjie Li;P. Rao Varanasi;Margaret C. Lawson;Timothy Hughes;George Jordhamo;Robert D. Allen;Hiroshi Ito
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- post-modification;
- esterification;
- 193-nm photoresist;
- developer compatibility;
- etch resistance;
45.Quantitative Description of Phenolic Polymer Dissolution Using the Concept of Gel Layer

机译：凝胶层概念对酚醛聚合物溶解的定量描述
- 作者：Se-Jin Choi;Joon-Yeon Cho
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
46.Simulation of 193 nm Photoresists Based on Different Polymer Platforms

机译：基于不同聚合物平台的193 nm光刻胶的仿真
- 作者：Doris Kang;Stewart Robertson;Edward Pavelchek
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 193 nm photoresists;
- lithographic simulation;
- parameter extraction;
- methacrylate;
- vinyl ether/maleic anhydride;
47.Study on Improved Resolution of Thick Film Resist (Verification by Simulation)

机译：改善厚膜抗蚀剂分辨率的研究（通过仿真验证）
- 作者：Yoshihisa Sensu;Atsushi Sekiguchi;Yasuhiro Miyake
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- thick-film resist;
- indenecarboxylic acid;
- development rate measurement system;
48.SU8C resist for electron beam lithography

机译：SU8C抗蚀剂，用于电子束光刻
- 作者：W. H Wong;E. Y. B. Pun
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- electron beam lithography;
- resist;
- optical elements;
49.Sumitomo Resist on Various BARC Substrates Using SVGL Micrascan 193

机译：住友使用SVGL Micrascan 193抵抗各种BARC基板
- 作者：M. Rajaratnam;G. Baxter;M. Riggs;P. Tasaico J. Zimmerman;J. Beach;P. Holland;C. Morris;K. Spurlock
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- 193nm photo resist;
- profiles;
- 193nm BARC;
- SVGL Micrascan 193;
50.Survey of Chemically Amplified Resist Models and Simulator Algorithms

机译：化学放大的电阻模型和仿真器算法综述
- 作者：Ebo Croffie;Lei Yuan;Mosong Cheng;Andrew Neureuther
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- chemically-amplified resist;
- post-exposure bake;
- model;
- diffusion;
- simulator;
51.Thin Resist Process having High Dry Etching Resistance in 0.13um KrF Lithography

机译：在0.13um KrF光刻中具有高抗干蚀性的薄抗蚀剂工艺
- 作者：Minoru Watanabe;Suguru Sasaki;Sachiko Yabe;Takashi Taguchi
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- thin resist process;
- dry etching resistance;
- electron beam stabilization;
- chemically amplified resist;
- KrF lithography;
52.Three-dimensional post-exposure modeling and its applications

机译：三维曝光后建模及其应用
- 作者：Lei Yuan;Mosong Cheng;Ebo Croffie;Andrew Neureuther
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- chemically amplified resist;
- post exposure bake;
- finite element method;
- frontal solver;
- T-top surface;
- footing;
- acid evaporation;
- double exposure;
53.Toward 0.1 um Contact Hole Process by Using Water Soluble Organic Over-Coating Material (WASOOM); Resist Flow Technique (III); Study on WASOOM, Top Flare and Etch Characterization

机译：通过使用水溶性有机外涂层材料（WASOOM）实现0.1微米的接触孔工艺;阻流技术（III）; WASOOM，顶部喇叭口和蚀刻特性的研究
- 作者：Jun-Sung Chun;Chang Ho Maeng;Mark R. Tesauro;John Strutvant
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- resist flow;
- WASOOM;
- water soluble material;
- sub-0.15 um contact hole;
- half tone mask;
- SOG;
54.Understanding Molecular Level Effects during Post Exposure Processing

机译：了解暴露后处理过程中的分子水平效应
- 作者：Gerard M. Schmid;Mark D. Smith;Chris A. Mack;Vivek K. Singh;Sean D. Burns;C. Grant Willson
- 会议名称：《Advances in Resist Technology and Processing XVIII》 | 2001年
- PROLITH;
- mesoscale simulation;
- line-edge roughness;
- surface roughness;