首页> 外国专利> INTEGRATED OPTICAL WAVEGUIDE DEVICE COMPRISING A POLYSILICON LAYER-BASED PASSIVE OPTICAL WAVEGUIDE DEVICE IN COMBINATION WITH AN ACTIVE OPTICAL WAVEGUIDE DEVICE, AND METHOD FOR MAKING SAME

INTEGRATED OPTICAL WAVEGUIDE DEVICE COMPRISING A POLYSILICON LAYER-BASED PASSIVE OPTICAL WAVEGUIDE DEVICE IN COMBINATION WITH AN ACTIVE OPTICAL WAVEGUIDE DEVICE, AND METHOD FOR MAKING SAME

机译:包括基于多晶硅层的无源光波导装置与有源光波导装置结合的集成光波导装置及其制造方法

摘要

A device for coupling light into/from an integrated optical/electronic circuit disposed at least in part in a wafer having an insulator layer (152, 104) and an upper semiconductor layer that includes an optical waveguide (160). The integrated optical/electronic circuit includes at least one active optical waveguide device (150), and at least one passive optical waveguide device (800), each of which is associated with, at least in part, in the upper semiconductor layer. In one aspect, the passive optical waveguide device (800) can be created by deposing a polysilicon layer (191) on the upper semiconductor layer. In another aspect, the passive optical waveguide device can be created by etching a Total Internal reflection (TIR) boundary within the upper semiconductor layer.
机译:一种用于将光耦合到集成光学/电子电路中/从集成光学/电子电路中耦合出的装置,该集成电路至少部分地设置在具有绝缘体层(152、104)和包括光波导(160)的上半导体层的晶片中。集成的光/电子电路包括至少一个有源光波导器件(150)和至少一个无源光波导器件(800),其每一个至少部分地与上半导体层相关。一方面,可通过在上部半导体层上沉积多晶硅层(191)来创建无源光波导装置(800)。在另一方面,可以通过蚀刻上半导体层内的全内反射(TIR)边界来创建无源光波导装置。

著录项

  • 公开/公告号CA2725883C

    专利类型

  • 公开/公告日2013-11-19

    原文格式PDF

  • 申请/专利权人 SIOPTICAL INC.;

    申请/专利号CA20022725883

  • 发明设计人 DELIWALA SHRENIK;

    申请日2002-05-15

  • 分类号G02B6/12;G02B6/13;G02B6/24;G02B6/42;H01L27/02;

  • 国家 CA

  • 入库时间 2022-08-21 15:54:38

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