首页> 外国专利> INTEGRATED OPTICAL WAVEGUIDE DEVICE COMPRISING A POLYSILICON LAYER-BASED PASSIVE OPTICAL WAVEGUIDE DEVICE IN COMBINATION WITH AN ACTIVE OPTICAL WAVEGUIDE DEVICE, AND METHOD FOR MAKING SAME

INTEGRATED OPTICAL WAVEGUIDE DEVICE COMPRISING A POLYSILICON LAYER-BASED PASSIVE OPTICAL WAVEGUIDE DEVICE IN COMBINATION WITH AN ACTIVE OPTICAL WAVEGUIDE DEVICE, AND METHOD FOR MAKING SAME

机译:包括基于多晶硅层的无源光波导装置与有源光波导装置结合的集成光波导装置及其制造方法

摘要

A device for coupling light into/from an integrated optical/electronic circuitdisposed atleast in part in a wafer having an insulator layer (152, 104) and an uppersemiconductorlayer that includes an optical waveguide (160). The integratedoptical/electronic circuitincludes at least one active optical waveguide device (150), and at least onepassiveoptical waveguide device (800), each of which is associated with, at least inpart, in theupper semiconductor layer. In one aspect, the passive optical waveguide device(800) canbe created by deposing a polysilicon layer (191) on the upper semiconductorlayer. Inanother aspect, the passive optical waveguide device can be created by etchinga TotalInternal reflection (TIR) boundary within the upper semiconductor layer.
机译:一种将光耦合到集成光学/电子电路或从集成光学/电子电路耦合的设备处置于至少部分在具有绝缘层(152、104)和上部半导体包括光波导(160)的层。整合光学/电子电路包括至少一个有源光波导装置(150),以及至少一个被动光波导装置(800),每个光波导装置至少与部分,在上半导体层。一方面,无源光波导装置(800)罐通过在上部半导体上沉积多晶硅层(191)来创建层。在另一方面,无源光波导装置可以通过蚀刻来形成。合计上部半导体层内的内部反射(TIR)边界。

著录项

  • 公开/公告号CA2725883A1

    专利类型

  • 公开/公告日2002-11-21

    原文格式PDF

  • 申请/专利权人 SIOPTICAL INC.;

    申请/专利号CA20022725883

  • 发明设计人 DELIWALA SHRENIK;

    申请日2002-05-15

  • 分类号G02B6/12;G02B6/13;G02B6/24;G02B6/42;H01L27/02;

  • 国家 CA

  • 入库时间 2022-08-21 23:57:56

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号