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Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance

机译:用于减少光致退化以提高稳定性能的用于光伏器件的非晶硅膜的沉积方法

摘要

A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.
机译:通过一种用于制造具有p型微晶硅层,p型非晶硅层,优选地包括本征非晶硅的缓冲硅层,以及p型结半导体层的pin结半导体层堆叠的方法来实现基板上的薄膜光伏器件。本征型非晶硅层,以及在本征型非晶硅层上方的n型硅层。

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