Techniques are disclosed for forming a directly plateable diffusion barrier within an interconnect structure to prevent diffusion of interconnect fill metal into surrounding dielectric material and lower metal layers. The barrier can be used in back-end interconnect metallization processes and, in an embodiment, renders a seed layer unnecessary. In accordance with various example embodiments, the barrier can be implemented, for instance, as: (1) a single layer of ruthenium silicide (RuSix) or ruthenium silicide nitride (RuSixNy); (2) a bi-layer of Ru/RuSix, RuSix/Ru, Ru/RuSixNy, or RuSixNy/Ru; or (3) a tri-layer of Ru/RuSix/Ru or Ru/RuSixNy/Ru. In some embodiments, Si and/or N concentrations can be adjusted to alter the barrier's degree of diffusion protection, receptiveness to the fill metal, and/or electrical conductivity.
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机译:公开了用于在互连结构内形成可直接镀覆的扩散阻挡层的技术,以防止互连填充金属扩散到周围的介电材料和下部金属层中。阻挡层可用于后端互连金属化工艺中,并且在一个实施例中,使得不需要种子层。根据各种示例实施例,可以将阻挡层实现为例如:(1)单层的硅化钌(RuSi x Sub>)或硅化钌氮化物(RuSi x Sub> N y Sub>); (2)双层Ru / RuSi x Sub>,RuSi x Sub> / Ru,Ru / RuSi x Sub> N y Sub>或RuSi x Sub> N y Sub> / Ru;或(3)三层Ru / RuSi x Sub> / Ru或Ru / RuSi x Sub> N y Sub> / Ru。在一些实施例中,可以调节Si和/或N的浓度以改变阻挡层的扩散保护程度,对填充金属的接受度和/或电导率。
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