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METHOD OF REMOVING RESIDUE DURING SEMICONDUCTOR DEVICE FABRICATION

机译:在半导体器件制造过程中去除残留物的方法

摘要

A method is described including forming a first photoresist feature and a second photoresist feature on a semiconductor substrate. A chemical material coating is formed on the semiconductor substrate. The chemical material coating interposes the first and second photoresist features. The semiconductor substrate is then rinsed; the rinsing removes the chemical material coating from the semiconductor substrate. The chemical material may mix with a residue disposed on the substrate between the first and second photoresist features. Removing the chemical material coating from the substrate may also remove the residue.
机译:描述了一种方法,该方法包括在半导体衬底上形成第一光刻胶特征和第二光刻胶特征。在半导体衬底上形成化学材料涂层。化学材料涂层介于第一和第二光刻胶特征之间。然后冲洗半导体衬底。漂洗从半导体衬底上去除化学材料涂层。化学材料可以与位于第一和第二光刻胶特征之间的残留物混合在基板上。从基材上去除化学材料涂层也可以去除残留物。

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