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Semiconductor device analysis and design apparatus, and semiconductor device analysis and design method
Semiconductor device analysis and design apparatus, and semiconductor device analysis and design method
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机译：半导体器件分析与设计装置以及半导体器件分析与设计方法
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摘要
In a support apparatus for analysis and design of a semiconductor device, a function indicating an impurity concentration distribution in a channel region of a first transistor in a depth direction is set. A structure data indicating a structure of a transistor device and a measurement value of each of electric characteristics of the transistor are related. A Poisson's equation, which is express by using the function, is solved by using a depletion layer width as a variable to calculate a surface potential, and a first calculation value of the electric characteristic of the first transistor is calculated by using the surface potential. A determining section determines the function to indicate the impurity concentration distribution of a first transistor when a measurement value corresponding to a first structure data which indicates a structure of the first transistor, and the first calculation value are substantially coincident with each other.
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