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Two dimensional self organization saburisogurahui nanosukeru structure and manner in order to produce this (two dimensional patterning the self organization material is used)
Two dimensional self organization saburisogurahui nanosukeru structure and manner in order to produce this (two dimensional patterning the self organization material is used)
Topic Sub lithography width and the nano scale structure which possesses interval and the manner which produces this are offered to the direction where two differs.Solutions It possesses sub lithography width and sub lithography interval, extending 1st nano scale self matched self organization nest line structures on the semiconductor substrate which is present 1st formation (20) are formed from 1st self organization block copolymer inside according to 1st direction. Restoration the restoration material in 1st formation, the 1st formation which includes 1st nanosukeru nest line structures (20) on, 2nd formation (60) it accumulates. It possesses sub lithography width and sub lithography interval, extending the 2nd nano scale self matched self organization nest line structures which are present 2nd formation (60) are formed from 2nd self organization block copolymer inside according to 2nd direction. 1st nanosukeru nest line structures and 1st formation (20) the base course under (12) transcribing the compound pattern of 2nd nanosukeru nest line structures, it forms the array of the structure which possesses periodicity in two directions. Choice figure Figure 6C
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