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METHOD FOR EVALUATING SiC SINGLE CRYSTAL SUBSTRATE AND SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND SiC EPITAXIAL WAFER, AND SiC SINGLE CRYSTAL
METHOD FOR EVALUATING SiC SINGLE CRYSTAL SUBSTRATE AND SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL AND SiC EPITAXIAL WAFER, AND SiC SINGLE CRYSTAL
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机译：碳化硅单晶基体和碳化硅外延片的评估方法，碳化硅单晶和碳化硅外延片的制造方法以及碳化硅单晶
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摘要
PROBLEM TO BE SOLVED: To provide a method for evaluating an SiC single crystal substrate, which is capable of evaluating a dislocation density of an SiC single crystal substrate by reflection X-ray topography without using a monochromator.;SOLUTION: The method for evaluating an SiC single crystal substrate evaluates dislocation of an SiC single crystal substrate by reflection X-ray topography. The method uses MoKα rays as an X-ray source and uses an asymmetrical reflecting surface as a diffraction surface to obtain an X-ray topography image of the SiC single crystal substrate and uses the X-ray topography image to measure dislocation density of the SiC single crystal substrate.;COPYRIGHT: (C)2014,JPO&INPIT
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