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Pattern formation process of the small features required for advanced pattern formation

机译:图案形成过程中高级图案形成所需的小特征

摘要

Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.
机译:提供了形成微电子结构的方法。该方法包括使用受控的底切工艺形成T形结构,以及将可选择性蚀刻的组合物沉积到T形结构的底切区域中。随后去除T形结构,以产生与T形结构的底切区域的宽度和可选的高度一致的极小的底切形成的特征。可以将这些方法与其他常规图案化方法组合以创建具有极小的特征尺寸的结构,而不管用于图案化的光的波长如何。

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