首页> 外国专利> MAGNETRON SPUTTER FILM DEPOSITION APPARATUS, MAGNETRON SPUTTER FILM DEPOSITION METHOD, AND FILM MEMBER MANUFACTURED USING THE SAME

MAGNETRON SPUTTER FILM DEPOSITION APPARATUS, MAGNETRON SPUTTER FILM DEPOSITION METHOD, AND FILM MEMBER MANUFACTURED USING THE SAME

机译:磁控溅射膜沉积装置,磁控溅射膜沉积方法以及使用该方法制造的膜成员

摘要

PROBLEM TO BE SOLVED: To provide a magnetron sputter film deposition apparatus and a magnetron sputter film deposition method that can form a thin film having superior gas barrier properties and small surface unevenness, and to provide a film member having a gas barrier film which has superior gas barrier properties and small surface unevenness.SOLUTION: A magnetron sputter film deposition apparatus 1 includes a base material 20, a backing plate 31, a target 30, a magnetron sputter cathode 3 having a magnet member 32, and a microwave plasma generation device 4 irradiating the part between the base material 20 and the target 30 with a microwave plasma. The plasma density between the base material 20 and the target 30 is larger nearby the target 30 than nearby the base material 20, and electron cyclotron resonance (ECR) is caused on a surface of the target 30. The target 30 is sputtered with a generated ECR plasma P2 and flying-out sputter particles are stuck on a surface of the base material 20 to form a thin film.
机译:解决的问题:提供一种磁控溅射膜沉积设备和磁控溅射膜沉积方法,其可以形成具有优异的阻气性和小的表面不平整度的薄膜,并且提供一种膜部件,其具有具有优异的阻气膜解决方案:磁控溅射膜沉积设备1包括基材20,背板31,靶30,具有磁体部件32的磁控溅射阴极3和微波等离子体产生装置4。用微波等离子体照射基材20与靶材30之间的部分。靶材30附近的基材20与靶材30之间的等离子体密度大于基材20附近的等离子体密度,并且在靶材30的表面上引起电子回旋共振(ECR)。靶材30被溅射有生成物。 ECR等离子体P2和飞散的溅射颗粒被粘附在基材20的表面上以形成薄膜。

著录项

  • 公开/公告号JP2014070236A

    专利类型

  • 公开/公告日2014-04-21

    原文格式PDF

  • 申请/专利权人 TOKAI RUBBER IND LTD;

    申请/专利号JP20120215755

  • 发明设计人 SASAI TATENORI;

    申请日2012-09-28

  • 分类号C23C14/35;

  • 国家 JP

  • 入库时间 2022-08-21 16:17:24

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