首页> 外国专利> RELIABILITY EVALUATION SIMULATION PROGRAM FOR EVALUATING RELIABILITY OF MULTILAYER INTERCONNECTION OF VIA CONNECTION, METHOD FOR IMPROVING ALLOWABLE CURRENT DENSITY OF MULTILAYER INTERCONNECTION OF VIA CONNECTION AND MULTILAYER INTERCONNECTION OF VIA CONNECTION

RELIABILITY EVALUATION SIMULATION PROGRAM FOR EVALUATING RELIABILITY OF MULTILAYER INTERCONNECTION OF VIA CONNECTION, METHOD FOR IMPROVING ALLOWABLE CURRENT DENSITY OF MULTILAYER INTERCONNECTION OF VIA CONNECTION AND MULTILAYER INTERCONNECTION OF VIA CONNECTION

机译：用于评估VIA连接的多层互连可靠性的可靠性评估模拟程序，用于提高VIA连接的多层互连的允许电流密度和VIA连接的多层互连的可靠性的评估程序

页面导航

摘要
著录项
相似文献

摘要

PROBLEM TO BE SOLVED: To provide a simulation method, etc. for evaluating reliability of interconnection by executing numerical simulation of an EM damage process and evaluating threshold current density while considering a reservoir effect for multilayer interconnection of via connection having reservoir structure.;SOLUTION: Current density distribution and temperature distribution are calculated by two-dimensional FE analysis. Dominant parameters (AFD^*_gen|end, AFD^*_gen) in the respective elements are calculated from analysis results and thin film characteristics. Atomic concentration N* regarding θ is calculated based on values of the dominant parameters. Atomic concentration N in the respective elements is calculated by an average of N* for all the values of θ. After repeatedly performing settings for calculation until reaching a stationary state, the calculation of the dominant parameters is repeated. In multilayer interconnection structure of via connection having reservoir structure, allowable current density of multilayer interconnection can be increased by providing only a via side of a cathode end with a reservoir, and increasing the minimum atomic concentration inside the multilayer interconnection.;COPYRIGHT: (C)2014,JPO&INPIT

机译：解决的问题：提供一种仿真方法等，通过执行EM损伤过程的数值模拟并评估阈值电流密度，同时考虑具有储层结构的过孔连接的多层互连的储层效应，来评估互连的可靠性。通过二维有限元分析计算出电流密度分布和温度分布。根据分析结果计算各个元素中的主要参数（AFD ^{* _{gen | end ，AFD ^{* _{gen ）和薄膜特性。基于主要参数的值计算关于θ的原子浓度N *。各个元素中的原子浓度N由所有θ值的N *平均值计算得出。重复执行计算设置直到达到稳定状态后，重复进行主要参数的计算。在具有储层结构的通孔连接的多层互连结构中，可以通过仅在阴极端的通孔侧提供一个储层，并增加多层互连内部的最小原子浓度来增加多层互连的允许电流密度。）2014，JPO＆INPIT}}}}

著录项

公开/公告号JP2014052832A

专利类型
公开/公告日2014-03-20

原文格式PDF
申请/专利权人 HIROSAKI UNIV;
展开▼

申请/专利号JP20120196681
发明设计人 SASAGAWA KAZUHIKO;
展开▼

申请日2012-09-06
分类号G06F17/50;H01L21/82;
国家 JP
入库时间 2022-08-21 16:18:58

相似文献

专利
外文文献
中文文献