A manufacturing method for a sic - volume single crystal by means of a thermal treatment and low-impedance monocrystalline sic - substrate

• 1. 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 [P] . 中国专利： CN102308031B . 2014.05.07
• 2. 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 [P] . 中国专利： CN102308031A . 2012-01-04
• 3. A manufacturing method for a sic - volume single crystal by means of a thermal treatment and low-impedance monocrystalline sic - substrate [P] . 德国专利： DE102009048868A1 . 2011-04-21

  机译： 通过热处理和低阻抗单晶硅衬底制造单晶硅单晶的方法

• 4. A manufacturing method for a sic - volume single crystal having an inhomogeneous network level and monocrystalline sic - substrate having an inhomogeneous network level [P] . 德国专利： DE102012222843B4 . 2017-01-12

  机译： 具有不均匀网络能级的单晶硅单晶的制造方法和具有不均匀网络能级的单晶硅单晶衬底的制造方法

• 5. A manufacturing method for a sic - volume single crystal having an inhomogeneous network level and monocrystalline sic - substrate having an inhomogeneous network level [P] . 德国专利： DE102012222843A1 . 2013-07-04

  机译： 具有不均匀网络能级的单晶硅单晶的制造方法和具有不均匀网络能级的单晶硅单晶衬底的制造方法

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