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COMPOUND SEMICONDUCTOR DEVICE OPERATING IN A NORMALLY-OFF MODE WHILE OBTAINING GOOD CHARACTERISTICS AND A MANUFACTURING METHOD THEREOF
COMPOUND SEMICONDUCTOR DEVICE OPERATING IN A NORMALLY-OFF MODE WHILE OBTAINING GOOD CHARACTERISTICS AND A MANUFACTURING METHOD THEREOF
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机译：具有良好特性的常态关闭模式下的复合半导体器件及其制造方法
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摘要
PURPOSE: A compound semiconductor device and a manufacturing method thereof suppress the diffusion of two-dimensional electron gas below a gate electrode by forming an Fe-doped layer between a substrate and an electron travel layer in a region corresponding to the position of the gate electrode.;CONSTITUTION: An electron travel layer (15) and an electron supply layer (17) are formed above a substrate (11). A gate electrode (19g), a source electrode (19s), and a drain electrode (19d) are formed on the electron supply layer. An Fe-doped layer (14) is located between the substrate and the electron travel layer in a region corresponding to the position of the gate electrode. The Fe-doped layer suppresses two-dimensional electron gas (100) below the gate electrode. The Fe-doped layer is doped with Fe at a concentration of equal to or more than 1×10^17 cm^-3.;COPYRIGHT KIPO 2013
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