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COMPOSITION FOR FORMING A SILICON CONTAINING RESIST UNDERLAYER AND A PATTERN FORMING METHOD CAPABLE OF PRECISELY TRANSFERRING PATTERNS ON A SUBSTRATE BY SUPPRESSING THE TRANSFORMATION OF AN UPPER RESIST PATTERN WHILE DRY-ETCHING
COMPOSITION FOR FORMING A SILICON CONTAINING RESIST UNDERLAYER AND A PATTERN FORMING METHOD CAPABLE OF PRECISELY TRANSFERRING PATTERNS ON A SUBSTRATE BY SUPPRESSING THE TRANSFORMATION OF AN UPPER RESIST PATTERN WHILE DRY-ETCHING
PURPOSE: A composition for forming a silicon containing resist underlayer and a pattern forming method are provided to be applied to resist patterns formed by hydrophilic organic compound obtained from negative development and hydrophobic compound obtained from existing positive development.;CONSTITUTION: A composition for forming a silicon containing resist underlayer includes a condensate of a mixture, a hydrolyzed condensate, or both of the condensates containing one or more compound selected from an organic boron compound represented by chemical formula 1 and the condensate of the same and one or more silicon compound represented by chemical formula 2.;COPYRIGHT KIPO 2013
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