首页> 外国专利> PLASMA PROCESSING APPARATUS CAPABLE OF REDUCING THE CHANGE OF THE ENERGY PICK OF AN ION ENERGY DISTRIBUTION FUNCTION AND A PLASMA PROCESSING METHOD THEREOF

PLASMA PROCESSING APPARATUS CAPABLE OF REDUCING THE CHANGE OF THE ENERGY PICK OF AN ION ENERGY DISTRIBUTION FUNCTION AND A PLASMA PROCESSING METHOD THEREOF

机译:能够减少离子能量分布函数的能量选择变化的等离子处理装置及其等离子处理方法

摘要

PURPOSE: A plasma processing apparatus capable of reducing the change of the energy pick of an IEDF(Ion Energy Distribution Function) and a plasma processing method thereof are provided to predict the waveform of a bias voltage generated on a wafer with high precision by using a result detected through a voltage detection head.;CONSTITUTION: An electromagnetic field supply unit supplies an electric field or a magnetic field in order to form plasma inside a vacuum process room(1). An exhaust unit is provided in order to exhaust the air inside the vacuum process room. A wafer(4) is provided on the mounting surface of the upper side of a vacuum container. A substrate stage(5) supports the wafer. A conductance control valve(18) variably controls the sized of the cross section area of a flow path within an exhaust path between a vacuum pump and an exhaust pipe. A cylindrical void(7) is formed to the upper direction of a micro wave permeable window(6). A shower plate(8) is formed on the position facing a substrate stage.;COPYRIGHT KIPO 2013
机译:目的:提供一种能够减少IEDF(离子能量分布函数)的能量拾取的变化的等离子体处理设备及其等离子体处理方法,以通过使用电子显微镜高精度地预测在晶片上产生的偏置电压的波形。组成:电磁场供应单元提供电场或磁场,以便在真空处理室(1)内形成等离子体。为了在真空处理室内排出空气,设置有排气单元。在真空容器的上侧的安装面上设置有晶片(4)。衬底台(5)支撑晶片。电导控制阀(18)可变地控制真空泵与排气管之间的排气路径内的流路的截面积的大小。在微波透过窗(6)的上方形成有圆筒状的空隙(7)。在面对衬底台的位置上形成淋浴板(8)。; COPYRIGHT KIPO 2013

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