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METHOD OF MANUFACTURING HETEROSTRUCTURES (OPTIONS) FOR MIDDLE IR RANGE, HETEROSTRUCTURE (VARIANTS) AND LED AND PHOTODIODE BASED ON THIS HETEROSTRUCTURE
METHOD OF MANUFACTURING HETEROSTRUCTURES (OPTIONS) FOR MIDDLE IR RANGE, HETEROSTRUCTURE (VARIANTS) AND LED AND PHOTODIODE BASED ON THIS HETEROSTRUCTURE
The invention relates to the technology of manufacturing sources of spontaneous radiation based on semiconductor compounds of the type AB for the spectral range of 2.6-4.7 microns and to the technology of manufacturing photosensitive structures for the spectral range of 2.0-4.7 microns. In the first embodiment, the heterostructure comprises a substrate containing InAs, a barrier layer containing InSbP and located on the substrate, an active layer containing InAsSbP and located on the barrier layer. The LEDs, made on the basis of the first variant of the heterostructure, emit at a wavelength in the range of 2.6-3.1 μm. According to the second embodiment, the heterostructure contains a substrate containing InAs, an active region containing InAsSb and located on the substrate, a barrier layer containing InSbP and located on the active region. The active region can contain an InAsSb bulk active layer, InAs / lnAsSb quantum wells, or a stressed GalnAs / lnAsSb superlattice. The LEDs made on the basis of the second variant of the heterostructure emit at a wavelength of 3.1–4.7 μm, and the photodiodes have broadband sensitivity in the 2.0-4.7 μm range. In the method of manufacturing the heterostructure, tert-butylarsine is used as the source of arsenic, and tert-butylphosphine is used as the source of phosphorus.
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