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MEMS fabrication process base on SU-8 masking layers

机译:基于SU-8掩模层的MEMS制造工艺

摘要

A novel fabrication process uses a combination of negative and positive photoresists with positive tone photomasks, resulting in masking layers suitable for bulk micromachining high-aspect ratio microelectromechanical systems (MEMS) devices. This technique allows the use of positive photomasks with negative resists, opening the door to an ability to create complementary mechanical structures without the fabrication delays and costs associated with having to obtain a negative photomask. In addition, whereas an SU-8 mask would normally be left in place after processing, a technique utilizing a positive photoresist as a release layer has been developed so that the SU-8 masking material can be removed post-etching.
机译:一种新颖的制造工艺将负性和正性光致抗蚀剂与正性光掩模结合使用,从而形成适用于体微机械加工高纵横比微机电系统(MEMS)器件的掩模层。该技术允许使用带有负性抗蚀剂的正性光掩模,从而为创建互补机械结构的能力打开了大门,而没有制造延迟和必须获得负性光掩模的相关成本。另外,尽管在加工后通常将SU-8掩模留在原处,但是已经开发出一种利用正性光刻胶作为脱模层的技术,以便可以在蚀刻后去除SU-8掩模材料。

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