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Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same

机译:紫外线发光AlGaN组合物和含有该组合物的紫外线发光装置

摘要

An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
机译:提供了一种包含III族氮化物有源区层的AlGaN组合物,用于UV发光器件的有源区,其中光的产生是通过纳米级尺寸的载流子的辐射复合发生的,组成上具有带隙的不均匀区域能量小于周围材料。此外,提供了具有由上述AlGaN组合物构成的有源区层的半导体UV发光器件,以及涉及分子束外延的AlGaN组合物的制造方法和半导体UV发光器件。

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