首页>
外国专利>
Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same
Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same
展开▼
机译:紫外线发光AlGaN组合物和含有该组合物的紫外线发光装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
展开▼