首页> 外国专利> EQUIVALENT CIRCUIT OF BIDIRECTIONAL SWITCH, SIMULATION METHOD FOR BIDIRECTIONAL SWITCH, AND SIMULATION DEVICE FOR BIDIRECTIONAL SWITCH

EQUIVALENT CIRCUIT OF BIDIRECTIONAL SWITCH, SIMULATION METHOD FOR BIDIRECTIONAL SWITCH, AND SIMULATION DEVICE FOR BIDIRECTIONAL SWITCH

机译:双向开关的等效电路,双向开关的仿真方法以及双向开关的仿真装置

摘要

Provided is a simulation method for simulating electrical properties of a bidirectional switch formed as a single element and having a double gate structure. A simulation is performed using an equivalent circuit having a symmetrical structure in which a drain electrode of a JFET and a drain electrode of another JFET are connected via a resistor.
机译:提供一种用于模拟形成为单个元件并具有双栅极结构的双向开关的电特性的模拟方法。使用具有对称结构的等效电路执行模拟,其中,JFET的漏极和另一个JFET的漏极通过电阻连接。

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