P-TYPE TRANSPARENT OXIDE CONDUCTIVE MATERIAL AND LIGHT-EMITTING DEVICE WITH THE SAME

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• 2. 一种中红外透明导电P型氧化物薄膜材料及其制备方法 [P] . 中国专利： CN108470782A . 2018-08-31
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  机译： 倒装芯片型氮化物半导体发光器件具有p型和n型半导体层，有源层，欧姆接触层，透光导电氧化物层和高折射金属氧化物层。

• 4. Transparent conductive film and method of fabricating the same, transparent conductive base material, and light-emitting device [P] . 美国专利： US8728615B2 . 2014-05-20

  机译： 透明导电膜及其制造方法，透明导电基材和发光装置

• 5. Transparent Conductive Film and Method of Fabricating the Same, Transparent Conductive Base Material, and Light-Emitting Device [P] . 美国专利： US2008038529A1 . 2008-02-14

  机译： 透明导电膜及其制造方法，透明导电性基材以及发光装置

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• 9. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range [R] . Avrutin, V., Silversmith, D., Morkoc, H. 2009

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• 2. Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices [J] . Jinmin Li ,Xinqiang Wang ,Dabing Li . 半导体学报：英文版 . 2019,第12期
• 3. Effects of-Thermal Processing on Transparent Conducting Oxides （TCO） Used in Optoelectronic Devices [J] . Zakia Fekkai . 材料科学与工程：中英文B版 . 2013,第003期
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