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SEMI-INSULATING NITRIDE SEMICONDUCTOR WAFER, SEMI-INSULATING NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND TRANSISTOR, AND METHOD AND APPARATUS FOR GROWING SEMI-INSULATING NITRIDE SEMICONDUCTOR LAYER
SEMI-INSULATING NITRIDE SEMICONDUCTOR WAFER, SEMI-INSULATING NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE AND TRANSISTOR, AND METHOD AND APPARATUS FOR GROWING SEMI-INSULATING NITRIDE SEMICONDUCTOR LAYER
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机译：半绝缘氮化物晶片，半绝缘氮化物自支撑基体和晶体管，以及生长半绝缘氮化物半导体层的方法和装置
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摘要
PROBLEM TO BE SOLVED: To provide a semi-insulating nitride semiconductor wafer, having high resistivity (e.g., ≥1×105 Ωcm to ≤1×1012 Ωcm), good uniformity of resistivity (e.g., dispersion of resistivity at positions in an inner peripheral side of wafer corresponding to 80% of surface area of the wafer is within ±30%), and good crystallinity (e.g., a half-value width of X-ray (004) diffraction is 30-300 sec); a semi-insulating nitride semiconductor self-supporting substrate and a transistor, and a method and an apparatus for growing a semi-insulating nitride semiconductor layer.;SOLUTION: This method for growing the nitride semiconductor layer comprises: supplying GaCl of group III raw material continuously or intermittently on a substrate; and also supplying NH3 of nitrogen raw material and Cp2Fe of semi-insulating dopant raw material imparting semi-insulating property alternately to grow the semi-insulating nitride semiconductor layer on the substrate.;COPYRIGHT: (C)2013,JPO&INPIT
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