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METHOD OF MANUFACTURING SEMI-INSULATING GALLIUM ARSENIDE WAFER AND SEMI-INSULATING GALLIUM ARSENIDE WAFER
METHOD OF MANUFACTURING SEMI-INSULATING GALLIUM ARSENIDE WAFER AND SEMI-INSULATING GALLIUM ARSENIDE WAFER
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机译：制造半绝缘砷化镓晶片和半绝缘砷化镓晶片的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semi-insulating gallium arsenide wafer with a large diameter in which slip defect of an epitaxial wafer is reduced in a heat treatment in a device manufacturing process using the semi-insulating gallium arsenide wafer, and to provide a semi-insulating gallium arsenide wafer.;SOLUTION: There is provided a method of manufacturing a semi-insulating gallium arsenide wafer, in which a slice substrate obtained by slicing a semi-insulating gallium arsenide wafer single crystal is subjected to a heat treatment in which the temperature is held at 750 to 850°C and then dropped at -20 to 35°C/min, and then the slice substrate is polished. The semi-insulating gallium arsenide wafer obtained by the method has an in-plane residual stress |Sr-St| of less than 1.2×10-5 at an outer peripheral edge part of the semi-insulating gallium arsenide wafer, where Sr is a radial strain of the semi-insulating gallium arsenide wafer and St is a cylinder-tangential strain. Higher effects are obtained when the semi-insulating gallium arsenide wafer has an external diameter of φ100 mm or larger.;COPYRIGHT: (C)2013,JPO&INPIT
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