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A process for the specific self-organization with lithography in the case of 193 nm and layered structures formed therefrom

机译：在193 nm情况下利用光刻技术进行特定的自组织的方法以及由此形成的分层结构

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摘要

A method of forming a layer structure which has a structure of regions of a self-organizing material, comprises the following steps: applying a photoresist layer, which comprises a non-crosslinking photoresist, on a substrate; optionally hardening of the photoresist layer; exposure of individual structured regions of the photoresist layer with a first radiation; optionally hardening of the exposed photoresist layer; and developing the exposed photoresist layer with a not alkaline developer, in order to achieve a structured to form a negative effect - photoresist layer, the uncrosslinked developed photoresist; wherein the developed photoresist in a certain organic solvents is insoluble, the for casting a certain material is suitable for the search telegrams in the position, and wherein the developed photoresist in an aqueous alkaline developers and / or in a second organic solvent is soluble. A solution containing the specific material which, in order to search telegrams in the position and in the specific organic solvent, to the structured photoresist layer is cast and the specific organic solvent is removed. The cast certain material is the possibility of self-organization, while the cast certain material can be selectively heated and / or is tempered, as a result of which the layer structure is formed, which the structure of regions of the self-assembled certain material.
机译：一种形成具有自组织材料的区域结构的层结构的方法，包括以下步骤：在基板上施加包括非交联光致抗蚀剂的光致抗蚀剂层。任选地使光致抗蚀剂层硬化;用第一辐射曝光光致抗蚀剂层的各个结构化区域;任选地使曝光的光致抗蚀剂层硬化;用非碱性显影剂对曝光后的光刻胶层进行显影，以达到结构化而形成负效应的作用。其中在某种有机溶剂中的已显影的光刻胶是不溶的，用于浇铸某种材料的该光刻胶适合于该位置的搜索电报，并且其中在水性碱性显影剂和/或第二有机溶剂中的已显影的光刻胶是可溶的。浇铸包含特定材料的溶液，该溶液为了在位置和特定有机溶剂中搜索电报而向结构化的光致抗蚀剂层浇铸，并除去特定有机溶剂。铸造的某种材料是自组织的可能性，而铸造的某种材料可以被选择性地加热和/或回火，其结果是形成了层结构，该层结构是自组装的某种材料的区域的结构。 。

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