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Edge-emitting semiconductor laser manufacturing method, involves monolithically integrating laser diodes on common growth substrate, where laser diodes emit radiation of different wavelengths
Edge-emitting semiconductor laser manufacturing method, involves monolithically integrating laser diodes on common growth substrate, where laser diodes emit radiation of different wavelengths
The method involves providing a common growth substrate (1), and monolithically integrating laser diodes (2, 3) on the common growth substrate, where the laser diodes emit radiation of different wavelengths. The wavelength of the emitted radiation of the laser diodes is greater than 10 nanometer. Individual layers of the laser diodes are matched together. The substrate is covered by the layers of the laser diodes. The laser diodes are provided with a bar wave guide manufactured by an etching process.
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