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Apparatus and method for quantifying the binding and dissociation kinetics of molecular interactions
Apparatus and method for quantifying the binding and dissociation kinetics of molecular interactions
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机译：用于量化分子相互作用的结合和解离动力学的装置和方法
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摘要
The invention of the incident light polarized in the adsorption layer of the biomaterial is formed on the dielectric thin film under immersion micro channel environment by p-wave incident to satisfy the anti-reflection condition relates to the refractive index measurement method of adsorption and dissociation of low molecular weight biomolecules with high sensitivity to the dynamic characteristics and the device can be measured, but is little affected by the change in the buffer solution. For this purpose, the support and, as a substrate made of a semiconductor or a dielectric formed on the target support, and dielectric thin film formed on the substrate, is provided at each of the incident window and the side window is reflected and the other part covers fitted to a support made of the target, the support and the support and micro channel structure microchannels are formed between the cover part; Injecting a buffer solution containing the sample of low-molecular-weight substance in the micro channel to the bio sample applying section for forming the adsorption layer of the sample in the dielectric thin film; Generating unit for irradiating a polarized incident light polarized in the absorption layer through the entrance window to meet non-reflecting condition that the incident angle to the p-wave; And the reflected light is incident through the adsorption layer of the window reflection, polarization detection unit for detecting a change in the polarization of the reflected light; molecular adsorption and dissociation dynamic characteristics, characterized in that the measuring device is provided that includes ; immersion, microchannels, bio-materials, adsorption and dissociation dynamics, adsorption, dissociation, p-wave antireflection, a semiconductor substrate, a dielectric thin film, semiconductor oxide
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