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SEMICONDUCTOR DEVICE MANUFACTURING METHOD CAPABLE OF STABLY EXPANDING THE LINE WIDTH OF AN OPEN AREA
SEMICONDUCTOR DEVICE MANUFACTURING METHOD CAPABLE OF STABLY EXPANDING THE LINE WIDTH OF AN OPEN AREA
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机译：能够稳定地扩大开放区域的线宽的半导体装置的制造方法
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摘要
PURPOSE: A semiconductor device manufacturing method is provided to stably increase the bottom line width of an open area through a surface processing and etching process, thereby preventing an increase of contact resistance due to a reduction of the bottom line width.;CONSTITUTION: An inter-layer insulating film(22) is arranged on a substrate(21). An etching stopping film(24) and separation film(25) are arranged on the inter-layer insulating film. A plurality of open areas(26) is arranged by selectively etching the separation film in order to expose the substrate. A surface processing process is performed with respect to the separation film. The open area is expanded by eliminating the surface processed separation film among the separation film. A conductive film is arranged in the inside of the expanded open area.;COPYRIGHT KIPO 2012
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