首页> 外国专利> METHOD AND APPARATUS FOR ENHANCING QUANTUM EFFICIENCY (QE) OF PHOTOCATHODE WITH SURFACE ACOUSTIC WAVES (SAW) AND APPLYING SURFACE ACOUSTIC WAVES (SAW) TO ELECTRON PHOTOINJECTOR

METHOD AND APPARATUS FOR ENHANCING QUANTUM EFFICIENCY (QE) OF PHOTOCATHODE WITH SURFACE ACOUSTIC WAVES (SAW) AND APPLYING SURFACE ACOUSTIC WAVES (SAW) TO ELECTRON PHOTOINJECTOR

机译:用表面声波(SAW)增强光阴极的量子效率(QE)并将表面声波(SAW)应用于电子光注入器的方法和装置

摘要

In a particular embodiment, a method is disclosed that includes exciting one or more surface acoustic waves (SAW) on a surface of a piezoelectric substrate of a photocathode of a photoinjector using one or more interdigital tranducers (IDT). The method also includes optically generating electrons (e) and holes (h) in the photocathode using an incident laser beam. The method also includes changing at least one of a recombination probability and a recombination rate of at least some electrons (e) and holes (h) in the photocathode producing a high-current electron gun having an increased beam brightness, which is a ratio of electron beam current to electron beam emittance, due to at least one of a decreased electron beam emittance of electrons photoemitted from the photocathode of the photoinjector and an increased electron beam current. The method results in enhancing a quantum efficiency (QE) of photoemission by the photocathode of the photoinjector, leading to production of intense, low emittance electron bunches at a high repetition rate using laser excitation. Also disclosed are devices based on the disclosed method.
机译:在特定实施例中,公开了一种方法,该方法包括使用一个或多个叉指式换能器(IDT)激发光注入器的光电阴极的压电基板的表面上的一个或多个表面声波(SAW)。该方法还包括使用入射激光束在光电阴极中光学产生电子(e)和空穴(h)。该方法还包括改变光电阴极中至少一些电子(e)和空穴(h)的复合概率和复合率中的至少一种,以产生具有增加的电子束亮度的高电流电子枪,其为电子束电流与电子束发射率的关系,至少是由于从光注入器的光电阴极发射的电子的电子束发射率降低和电子束电流增大所导致的。该方法导致通过光注入器的光阴极提高光发射的量子效率(QE),从而导致使用激光激发以高重复率产生强烈的低发射电子束。还公开了基于所公开的方法的设备。

著录项

  • 公开/公告号WO2012135544A1

    专利类型

  • 公开/公告日2012-10-04

    原文格式PDF

  • 申请/专利权人 MUONS INCORPORATED;

    申请/专利号WO2012US31295

  • 发明设计人 AFANASEV ANDREI;JOHNSON ROLLAND;

    申请日2012-03-29

  • 分类号H01J3/02;H01J29/48;

  • 国家 WO

  • 入库时间 2022-08-21 17:13:22

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