Method of manufacturing a semiconductor device with quantum dots formed by self-assembled growth

• 1. 半导体器件用部材、以及半导体器件用部材形成液和半导体器件用部材的制造方法、以及使用该方法制造的半导体器件用部材形成液、荧光体组合物、半导体发光器件、照明装置和图像显示装置 [P] . 中国专利： CN101506969B . 2011.08.31
• 2. 半导体器件用部材、以及半导体器件用部材形成液和半导体器件用部材的制造方法、以及使用该方法制造的半导体器件用部材形成液、荧光体组合物、半导体发光器件、照明装置和图像显示装置 [P] . 中国专利： CN101506969A . 2009-08-12
• 3. Method of manufacturing semiconductor device with quantum dots formed by self-assembled growth [P] . 美国专利： US7892871B2 . 2011-02-22

  机译： 具有通过自组装生长形成的量子点的半导体器件的制造方法

• 4. fabrication method of semiconductor device for growth of self-aligned array of self-assembled quantum dots and current blocking structure [P] . 韩国专利： KR100331687B1 . 2002-04-09

  机译： 自组装量子点的自对准阵列生长的半导体器件的制造方法及电流阻挡结构

• 5. FABRICATION METHOD OF COMPOUND SEMICONDUCTOR DEVICE WITH SELF-ALIGNED GROWTH OF SELF-ASSEMBLED QUANTUM DOTS AND CURRENT BLOCKING STRUCTURE [P] . 韩国专利： KR20010054538A . 2001-07-02

  机译： 具有自组装量子点的自对准生长和电流阻挡结构的复合半导体器件的制造方法

• 1. New physics and devices based on self-assembled semiconductor quantum dots [J] . Mowbray DJ, Skolnick MS Journal of Physics, D. Applied Physics: A Europhysics Journal . 2005,第13期
• 2. SELF-AsSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications [J] . M.S. Skolnick, D.J. Mowbray Annual Review of Materials Research . 2004,第期
• 3. Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices [J] . Asano Tetsuya, Fang Zhaoqiang, Madhukar Anupam Journal of Applied Physics . 2010,第7期
• 4. Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy [C] . C. W. Tu, S. Suraprapapich, Y. M. Shen, Electrochemical Society . 2006
• 5. Self-assembled quantum dot semiconductor nanostructures modeling: Photonic device applications. [D] . Benhsaien, Abdessamad. 2006
• 6. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots [O] . Johannes D Plumhof, Rinaldo Trotta, Armando Rastelli, 2012
• 7. Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth [O] . Sasakura, H., Kayamori, S., Adachi, S., 2007

• 1. Quantum light source devices of In(Ga)As semiconductor self-assembled quantum dots [J] . Xiaowu He ,Yifeng Song ,Ying Yu . 半导体学报：英文版 . 2019,第7期
• 2. SURFACE MORPHOLOGY OF SELF-ASSEMBLED VERTICALLY STACKED InAs QUANTUM DOTS BY SIZE-CONTROLLED GROWTH [J] . S.W.Li ,K.Koike . 金属学报：英文版 . 2005,第3期
• 3. Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat [J] . Hao Chen ,Xiuming Dou ,Kun Ding . 半导体学报：英文版 . 2019,第7期
• 4. Quantum Size-Dependent Third-Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots [J] . SUNTing XIONGGui-guang . 武汉大学自然科学学报：英文版 . 2005,第2期
• 5. Terahertz Semiconductor Quantum Well Devices [J] . Liu H C ,Luo H ,Ban D . 半导体学报：英文版 . 2006,第4期
• 6. 静电层层自组装构筑半导体CdTe量子点光学功能薄膜材料 [C] . 张军 ,李倩 ,狄晓威 . 中国化学会第七届全国无机化学学术会议 . 2007
• 7. 面向低维量子器件的自组装InAs量子点的MOCVD生长及性能研究 [A] . 李森林 . 2015