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ESD PROTECTION FOR HIGH-VOLTAGE-TOLERANCE OPEN-DRAIN OUTPUT PAD

机译:耐高压开漏输出焊盘的ESD保护

摘要

A high-voltage NMOS transistor for ESD protection is coupled between a high-voltage I/O pad and a low-voltage terminal, and has a parasitic component between its source and drain. A trigger has an input coupled to the high-voltage I/O pad and an output coupled to the parasitic component. When the voltage on the high-voltage I/O pad raises above a threshold value, the trigger applies a voltage to trigger the parasitic component, so as to release an ESD current from the high-voltage I/O pad to the low-voltage terminal through the high-voltage NMOS transistor.
机译:用于ESD保护的高压NMOS晶体管耦合在高压I / O焊盘和低压端子之间,并且在其源极和漏极之间具有寄生成分。触发器的输入耦合到高压I / O焊盘,输出耦合到寄生元件。当高压I / O焊盘上的电压升高到阈值以上时,触发器将施加电压以触发寄生分量,从而将ESD电流从高压I / O焊盘释放到低压端子通过高压NMOS晶体管。

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