首页> 外国专利> METHOD OF MANUFACTURING SILICON THIN FILM, METHOD OF MANUFACTURING SILICON THIN-FILM PHOTOVOLTAIC CELL, SILICON THIN FILM, AND SILICON THIN-FILM PHOTOVOLTAIC CELL

METHOD OF MANUFACTURING SILICON THIN FILM, METHOD OF MANUFACTURING SILICON THIN-FILM PHOTOVOLTAIC CELL, SILICON THIN FILM, AND SILICON THIN-FILM PHOTOVOLTAIC CELL

机译:硅薄膜的制造方法,硅薄膜光伏电池的制造方法,硅薄膜和硅薄膜光伏电池的制造方法

摘要

Disclosed is a method of manufacturing a silicon thin film, a method of manufacturing a silicon thin-film photovoltaic cell, and a silicon thin film. There is provided a method of manufacturing a silicon thin film in a form in which an inert face formed by an exposed face of a silicon substrate and an inert layer is formed by selectively forming the inert layer on the silicon substrate in which growth of a silicon crystal is inactive for a raw material gas of the silicon crystal, and the silicon crystal is grown from the exposed face such that the silicon crystal covers the silicon substrate by supplying a raw material gas, of which a surface decomposition reaction on the silicon substrate is dominant, out of the raw material gas to the silicon substrate. By forming a width of the exposed face in a range of 0.001 μm to 1 μm, the silicon thin film is formed in a state that the silicon thin film can be peeled off from the silicon substrate.
机译:公开了一种制造硅薄膜的方法,一种制造硅薄膜光伏电池的方法以及一种硅薄膜。提供一种以以下形式制造硅薄膜的方法,其中通过在硅衬底上选择性地形成惰性层来形成由硅衬底的暴露面和惰性层形成的惰性面,其中硅的生长晶体对于硅晶体的原料气体是惰性的,并且硅晶体从暴露面生长,使得硅晶体通过供应原料气体而覆盖硅衬底,该原料气体在硅衬底上的表面分解反应是占主导地位,从原料气体中流向硅衬底。通过使露出面的宽度在0.001μm〜1μm的范围内,以能够从硅基板剥离硅薄膜的状态形成硅薄膜。

著录项

  • 公开/公告号US2012160325A1

    专利类型

  • 公开/公告日2012-06-28

    原文格式PDF

  • 申请/专利权人 NOBUYUKI AKIYAMA;

    申请/专利号US201113263956

  • 发明设计人 NOBUYUKI AKIYAMA;

    申请日2011-01-31

  • 分类号H01L31/0264;H01L31/18;B32B3/30;H01L21/20;C30B25/02;

  • 国家 US

  • 入库时间 2022-08-21 17:33:30

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