首页> 外国专利> Method of manufacturing chalcopyrite thin film solar cell comprising applying zinc sulfide buffer layer to chalcopyrite absorption layer formed on substrate by chemical bath deposition

Method of manufacturing chalcopyrite thin film solar cell comprising applying zinc sulfide buffer layer to chalcopyrite absorption layer formed on substrate by chemical bath deposition

机译:一种制造黄铜矿薄膜太阳能电池的方法,该方法包括将硫化锌缓冲层施加到通过化学浴沉积形成在基板上的黄铜矿吸收层上

摘要

Chemical bath deposition (CBD) has proved top be the most favorable method for application of a buffer layer to semiconductor substrates, for example, chalcopyrite thin-film solar cells and whereby previously cadmium sulfide (CdS) was deposited and as cadmium is a highly toxic heavy metal and alternatives have been required. According to the invention, the semiconductor substrate is dipped in a solution for approximately 10 minutes and produced by the dissolution of zinc sulfate (0.05-0.5 mol/l) and thiourea (0.2 to 1.5 mol/l) in distilled water at a temperature being held essentially constant throughout said period. For the first time and the ZnS layer permits comparable or higher efficiencies than conventionally only achieved with toxic cadmium compounds. The method is hence much more environmentally-friendly with the same result.
机译:事实证明,化学浴沉积(CBD)是将缓冲层施加到半导体衬底(例如黄铜矿薄膜太阳能电池)上的最有利方法,并且以前沉积了硫化镉(CdS)且镉具有剧毒作用需要重金属和替代品。根据本发明,将半导体衬底浸入溶液中约10分钟,并通过将硫酸锌(0.05-0.5 mol / l)和硫脲(0.2至1.5 mol / l)溶解在蒸馏水中并在室温下溶解而制得。在上述期间内保持基本恒定。与传统上仅使用有毒镉化合物才能达到的效率相比,ZnS层首次具有可比或更高的效率。因此,该方法对环境更友好,并且结果相同。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号